Threshold voltage distribution in MLC NAND flash memory: Characterization, analysis, and modeling

Proceedings -Design, Automation and Test in Europe, DATE

Volumn , Issue , 2013, Pages 1285-1290

  Cai, Yu ^a   Haratsch, Erich F ^b   Mutlu, Onur ^a   Mai, Ken ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b LSI Corporation   (United States)

Author keywords

Memory reliability; Memory signal processing; NAND flash; Read retry; Threshold voltage distribution

Indexed keywords

ERROR CORRECTION; MEMORY ARCHITECTURE; NAND CIRCUITS; SIGNAL PROCESSING; THRESHOLD VOLTAGE; VOLTAGE DISTRIBUTION MEASUREMENT; VOLTAGE DIVIDERS; WHITE NOISE;

ADDITIVE WHITE NOISE; MEMORY RELIABILITY; MULTI LEVEL CELL (MLC); NAND FLASH; PROCESS TECHNOLOGIES; READ RETRY; TESTING INFRASTRUCTURE; THRESHOLD VOLTAGE DISTRIBUTION;

FLASH MEMORY;

EID: 84885577384     PISSN: 15301591     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.7873/date.2013.266     Document Type: Conference Paper

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