High performance Langmuir-Schaeffer film transistors based on air stable n-type diperylene bisimide

Organic Electronics

Volumn 14, Issue 10, 2013, Pages 2610-2616

  Liu, Huiying ^a,b   Wu, Yishi ^a   Wang, Zhaohui ^a   Fu, Hongbing ^a  

^a PEKING UNIVERSITY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Di(perylene bisimide); Electron mobility; Field effect transistor; Interface; Langmuir Schaeffer film

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; SELF ASSEMBLY;

CHARGE TRANSPORT LAYER; ELECTRON-INJECTION PROPERTY; HYDROPHOBIC SUBSTRATE; LANGMUIR-SCHAEFFER; LATERAL PACKING DENSITY; LONG TIME STABILITIES; OPTIMIZED CONFIGURATION; PERYLENE BISIMIDES;

INTERFACES (MATERIALS);

EID: 84885477971     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2013.05.021     Document Type: Article

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