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Journal of Nanoscience and Nanotechnology

Volumn 13, Issue 9, 2013, Pages 6395-6399

Resistive switching characteristics of the Cr/ZnO/Cr structure

(6) Yoo, E J a Kim, J H a Song, J H b Yoon, T S a Choi, Y J a Kang, C J a

a Myong Ji University (South Korea)

b Kyung Hee University Hospital (South Korea)

Author keywords

ReRAM; Resistive switcing; ZnO

Indexed keywords

NONVOLATILE MEMORY DEVICES; RADIO FREQUENCY MAGNETRON SPUTTERING; RERAM; RESISTIVE RANDOM ACCESS MEMORY (RERAM); RESISTIVE SWITCHING MECHANISMS; RESISTIVE SWITCING; ZINC OXIDE THIN FILMS; ZNO;

METALLIC FILMS; NONVOLATILE STORAGE; OPTICAL FILMS; ZINC OXIDE;

SWITCHING SYSTEMS;

EID: 84885461746 PISSN: 15334880 EISSN: 15334899 Source Type: Journal
DOI: 10.1166/jnn.2013.7615 Document Type: Article

Times cited : (7)

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