Effect of Al Doping on Structural, Electrical, Optical and Photoluminescence Properties of Nano-Structural ZnO Thin Films

Journal of Materials Science and Technology

Volumn 28, Issue 4, 2012, Pages 329-335

  Rahman, M Mozibur ^a   Khan, M K R ^a   Islam, M Rafiqul ^a   Halim, M A ^a   Shahjahan, M ^a   Hakim, M A ^b   Saha, Dilip Kumar ^b   Khan, Jasim Uddin ^c  

^a UNIVERSITY OF RAJSHAHI   (Bangladesh)

^b ATOMIC ENERGY CENTER   (Bangladesh)

^c BANGLADESH COUNCIL OF SCIENTIFIC AND INDUSTRIAL RESEARCH BCSIR   (Bangladesh)

Author keywords

Nano structure; Photoluminescence; Surface morphology; Thin film; ZnO

Indexed keywords

ABSORPTION EDGES; AL-DOPED ZNO; AL-DOPING; DEEP LEVEL; DEEP LEVEL EMISSION; GLASS SUBSTRATES; NANO GRAINS; NEAR BAND EDGE; OPTICAL BAND GAP ENERGY; PHOTOLUMINESCENCE PEAK; PHOTOLUMINESCENCE PROPERTIES; SPECTRAL ABSORPTIONS; SPRAY PYROLYSIS METHOD; SUBSTRATE TEMPERATURE; WURTZITES; X-RAY DIFFRACTION STUDIES; ZNO; ZNO THIN FILM;

ACTIVATION ENERGY; ALUMINUM; ELECTRIC PROPERTIES; FILM GROWTH; METALLIC FILMS; NANOSTRUCTURES; OPTICAL FILMS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SPRAY PYROLYSIS; SUBSTRATES; SURFACE MORPHOLOGY; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

SEMICONDUCTOR DOPING;

EID: 84860784605     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1005-0302(12)60064-4     Document Type: Article

References (35)

1. Park S.M., Ikegami T., Ebihara K. Jpn. J. Appl. Phys. 2006, 45:8453.
2. Ohta H., Hosono H. Mater. Today 2004, 7:42.
3. Park S.M., Ikegami T., Ebihara K. Jpn. J. Appl. Phys. 2005, 44:8027.
4. Suzuki S., Miyata T., Ishii M., Minami T. Thin Solid Films 2003, 434:14.
5. Liu C., Masuda Y., Wu Y., Taki O. Thin Solid Films 2006, 503:110.
6. Zhao J., Hu L., Wang Z., Sun J., Wang Z. Appl. Surf. Sci. 2006, 253:841.
7. Heo Y.W., Ip K., Park S.J., Pearton S.J., Norton D.P. Appl. Phys. A 2004, 78:53.
8. Soki T., Hatanaka Y., Look D.C. Appl. Phys. Lett. 2000, 76:3257.
9. Liu Y., Gorla C.R., Liang S., Emanetoglu N., Lu Y., Shen H., Wraback M. J. Electron. Mater. 2000, 29:60.
10. Raynold D.C., Look D.C., Jogai B. Solid State Commun. 1996, 99:873.
11. Shinde V.R., Gujar T.P., Lokhande C.D., Mane R.S., Han S.H. J. Cryst. Growth 2006, 296:6.
12. Ohno H. Science 1998, 281:951.
13. Singh L.K., Mohan H. J. Pure Appl. Phys. 1975, 13:486.
14. Shan F.K., Kim B.I., Liu G.X., Liu Z.F., Sohn J.Y., Lee W.J., Shin B.C., Yu Y.S. J. Appl. Phys. 2004, 95:4772.
15. Xu Z.Q., Deng H., Xie J., Li Y., Zu X.T. Appl. Surf. Sci. 2006, 253:476.
16. Mass J., Bhattachariya P., Katiyar R.S. Mater. Sci. Eng. B 2003, 103:9.
17. Wang Q.P., Zhang D.H., Xue Z.Y., Haso X.T. Appl. Surf. Sci. 2002, 201:123.
18. Zhang J., Yu W., Zhang L. Phys. Lett. A 2002, 299:276.
19. Kashiwaba Y., Sugawara K., Haga K. Thin Solid Films 2002, 411:87.
20. Kato H., Sano M., Miyamoto K., Yao T. J. Cryst. Growth 2002, 237-239:538.
21. Haase M., Weller H., Henglin A. J. Phys. Chem. 1998, 92:482.
22. Yin X.J., Lai G.R., Chen J.S., Kao J.S. Surf. Coat. Technol. 1997, 96:239.
23. Olvera M.D., Maldonado A., Asomoza R., Melendez-Lira M. Sol. Energy Mater. Sol. Cells 2002, 71:61.
24. Khan M.K.R., Rahman M.A., Shahjahan M., Rahman M.M., Hakim M.A., Saha D.K., Khan J.U. Curr. Appl. Phys. 2010, 10:790.
25. Cullity B.D. Elements of X-ray diffraction 1967, 262. Addison-Wesley Publishing Co. Inc., New York.
26. Alam M.J., Cameron D.C. J. Sol-Gel Sci. Technol. 2002, 25:137.
27. Goyal D., Solanki P., Marathe B., Takawale M., Bhide V. Jpn. J. Appl. Phys. 1992, 31:61.
28. Cossement D., Streydio J.M. J. Cryst. Growth 1985, 72:57.
29. Mott N.F., Davis E.A. Electronic Processes in Non-crystalline Materials 1979, 240. Clarendon Press, Oxford. 2nd edn.
30. Shishiyanu S., Chow L., Lupan O., Shishiyanu T. ECS Trans. 2006, 3:65.
31. Li X.P., Zhang B.L., Zhu H.C., Dong X., Xia X.C., Cui Y.G., Ma Y., Du G.T. J. Phys. D-Appl. Phys. 2008, 41:035101.
32. Park W.I., Yi G.C. J. Electron. Matter. 2001, 30:L32.
33. Mikrajuddin F., Iskander K., Okutama F., Sji G. J. Appl. Phys. 2001, 89:6431.
34. Bylander E.G. J. Appl. Phys. 1978, 49:1188.
35. Kohan A.F., Ceder G., Morgan D., Van de Walle C.G. Phys. Rev. B 2000, 61:15019.