Silicon oxide nanowires: Facile and controlled large area fabrication of vertically oriented silicon oxide nanowires for photoluminescence and sensor applications

ACS Applied Materials and Interfaces

Volumn 5, Issue 18, 2013, Pages 8932-8938

  Alabi, Taiwo R ^a   Yuan, Dajun ^b   Bucknall, David ^a   Das, Suman ^a,b  

^a Georgia Institute of Technology   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

electromechanical sensor; nanofabrication; photoluminescence; reactive ion etching; silicon oxide nanowires

Indexed keywords

CHEMICAL VAPOR DEPOSITIONS (CVD); CONVENTIONAL TECHNIQUES; ELECTRO-MECHANICAL SENSORS; FABRICATION PROCEDURE; FERROMAGNETIC EFFECT; PHOTOLUMINESCENCE PROPERTIES; SILICON OXIDE NANOWIRES; SILICON OXIDE SUBSTRATES;

ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; ELECTROMECHANICAL DEVICES; FABRICATION; NANOTECHNOLOGY; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SENSORS; SILICON OXIDES; VAPORS;

NANOWIRES;

EID: 84885058780     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am401787c     Document Type: Article

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