The effect of Mg and Al co-doping on the structural and photoelectric properties of ZnO thin film

Materials Science in Semiconductor Processing

Volumn 17, Issue , 2014, Pages 27-32

  Wang, C Y ^a   Ma, S Y ^a   Li, F M ^a   Chen, Y ^b   Xu, X L ^a   Wang, T ^a   Yang, F C ^a   Zhao, Q ^a   Liu, J ^a   Zhang, X L ^a   Li, X B ^a   Yang, X H ^a   Zhu, J ^a  

^a NORTHWEST NORMAL UNIVERSITY   (China)

^b NORTH MINZU UNIVERSITY   (China)

Author keywords

Heterojunction; PL; XRD; ZnO thin film

Indexed keywords

HEXAGONAL WURTZITE STRUCTURE; PL; PREFERENTIAL ORIENTATION; REACTIVE MAGNETRON SPUTTERING; ULTRAVIOLET-VISIBLE SPECTRA; X-RAY DIFFRACTION INVESTIGATIONS; XRD; ZNO THIN FILM;

GRAIN SIZE AND SHAPE; HETEROJUNCTIONS; METALLIC FILMS; OPTICAL FILMS; PHOTOLUMINESCENCE SPECTROSCOPY; THIN FILMS; X RAY DIFFRACTION; ZINC SULFIDE;

ALUMINUM;

EID: 84884325141     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2013.08.010     Document Type: Article

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