High field breakdown characteristics of carbon nanotube thin film transistors

Nanotechnology

Volumn 24, Issue 40, 2013, Pages

  Gupta, Man Prakash ^a   Behnam, Ashkan ^b   Lian, Feifei ^b,d   Estrada, David ^b,e   Pop, Eric ^b,c,d   Kumar, Satish ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^d Stanford University   (United States)

^e Boise State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT ANGLE; BREAKDOWN CHARACTERISTICS; CARBONNANOTUBE NETWORK (CNT); CHANNEL GEOMETRY; COMPUTATIONAL TECHNIQUE; DEVICE GEOMETRIES; NETWORK MORPHOLOGY; THERMAL RELIABILITY;

CARBON NANOTUBES; COMPUTATIONAL GEOMETRY; ELECTRIC BREAKDOWN; MORPHOLOGY; RELIABILITY ANALYSIS; THIN FILMS;

THIN FILM TRANSISTORS;

EID: 84884274398     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/40/405204     Document Type: Article

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