Impact of thermal boundary conductances on power dissipation and electrical breakdown of carbon nanotube network transistors

Journal of Applied Physics

Volumn 112, Issue 12, 2012, Pages

  Prakash Gupta, Man ^a   Chen, Liang ^a   Estrada, David ^b   Behnam, Ashkan ^b   Pop, Eric ^b,c   Kumar, Satish ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOSSES; FLEXIBLE ELECTRONICS; MACROS; MOLECULAR DYNAMICS; SEMICONDUCTOR JUNCTIONS; SILICA; SUBSTRATES; THERMAL CONDUCTIVITY; THIN FILM TRANSISTORS;

CARBON NANOTUBE NETWORK; ELECTRICAL BREAKDOWN; ELECTRONICS APPLICATIONS; MOLECULAR DYNAMICS SIMULATIONS; SUBSTRATE INTERFACE; TEMPERATURE PROFILES; THERMAL BOUNDARY CONDUCTANCE; THERMAL TRANSPORT;

CARBON NANOTUBES;

EID: 84872835155     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4767920     Document Type: Article

References (51)

1. R. H. Reuss, B. R. Chalamala, A. Moussessian, M. G. Kane, A. Kumar, D. C. Zhang, J. A. Rogers, M. Hatalis, D. Temple, G. Moddel, B. J. Eliasson, M. J. Estes, J. Kunze, E. S. Handy, E. S. Harmon, D. B. Salzman, J. M. Woodall, M. A. Alam, J. Y. Murthy, S. C. Jacobsen, M. Olivier, D. Markus, P. M. Campbell, and E. Snow, Proc. IEEE 93, 1239 (2005). 10.1109/JPROC.2005.851237
2. M. Ha, Y. Xia, A. A. Green, W. Zhang, M. J. Renn, C. H. Kim, M. C. Hersam, and C. D. Frisbie, ACS Nano 4, 4388 (2010). 10.1021/nn100966s
3. S. Kim, S. Kim, J. Park, S. Ju, and S. Mohammadi, ACS Nano 4, 2994 (2010). 10.1021/nn1006094
4. Q. Cao and J. A. Rogers, Adv. Mater. 21, 29 (2009). 10.1002/adma. 200801995
5. D.-M. Sun, M. Y. Timmermans, Y. Tian, A. G. Nasibulin, E. I. Kauppinen, S. Kishimoto, T. Mizutani, and Y. Ohno, Nat. Nanotechnol. 6, 156 (2011). 10.1038/nnano.2011.1
6. Q. Cao, H.-S. Kim, N. Pimparkar, J. P. Kulkarni, C. Wang, M. Shim, K. Roy, M. A. Alam, and J. A. Rogers, Nature (London) 454, 495 (2008). 10.1038/nature07110
7. M. C. LeMieux, M. Roberts, S. Barman, Y. W. Jin, J. M. Kim, and Z. Bao, Science 321, 101 (2008). 10.1126/science.1156588
8. J. Opatkiewicz, M. C. LeMieux, and Z. Bao, ACS Nano 4, 2975 (2010). 10.1021/nn101092d
9. J. P. Opatkiewicz, M. C. LeMieux, and Z. Bao, ACS Nano 4, 1167 (2010). 10.1021/nn901388v
10. T. Sekitani, U. Zschieschang, H. Klauk, and T. Someya, Nat. Mater. 9, 1015 (2010). 10.1038/nmat2896
11. X. Zhan, A. Facchetti, S. Barlow, T. J. Marks, M. A. Ratner, M. R. Wasielewski, and S. R. Marder, Adv. Mater. 23, 268 (2011). 10.1002/adma. 201001402
12. K. Ryu, A. Badmaev, C. Wang, A. Lin, N. Patil, L. Gomez, A. Kumar, S. Mitra, H. S. P. Wong, and C. Zhou, Nano Lett. 9, 189 (2008). 10.1021/nl802756u
13. G. Gruner, Anal. Bioanal. Chem. 384, 322 (2006). 10.1007/s00216-005-3400- 4
14. D. Pribat and P. Bondavalli, J. Disp. Technol. 8, 54 (2012). 10.1109/JDT.2011.2162817
15. H. C. Lim, B. Schulkin, M. J. Pulickal, S. Liu, R. Petrova, G. Thomas, S. Wagner, K. Sidhu, and J. F. Federici, Sens. Actuators, A 119, 332 (2005). 10.1016/j.sna.2004.10.012
16. C. Wang, J.-C. Chien, K. Takei, T. Takahashi, J. Nah, A. M. Niknejad, and A. Javey, Nano Lett. 12, 1527 (2012). 10.1021/nl2043375
17. T. Takahashi, K. Takei, A. G. Gillies, R. S. Fearing, and A. Javey, Nano Lett. 11, 5408 (2011). 10.1021/nl203117h
18. L. Hu, D. S. Hecht, and G. Grüner, Nano Lett. 4, 2513 (2004). 10.1021/nl048435y
19. S. Kumar, J. Y. Murthy, and M. A. Alam, Phys. Rev. Lett. 95, 066802 (2005). 10.1103/PhysRevLett.95.066802
20. P. E. Lyons, S. De, F. Blighe, V. Nicolosi, L. F. C. Pereira, M. S. Ferreira, and J. N. Coleman, J. Appl. Phys. 104, 044302 (2008). 10.1063/1.2968437
21. P. N. Nirmalraj, P. E. Lyons, S. De, J. N. Coleman, and J. J. Boland, Nano Lett. 9, 3890 (2009). 10.1021/nl9020914
22. S. Kumar, M. A. Alam, and J. Y. Murthy, Appl. Phys. Lett. 90, 104105 (2007). 10.1063/1.2712428
23. R. S. Prasher, X. J. Hu, Y. Chalopin, N. Mingo, K. Lofgreen, S. Volz, F. Cleri, and P. Keblinski, Phys. Rev. Lett. 102, 105901 (2009). 10.1103/PhysRevLett.102.105901
24. H. Zhong and J. R. Lukes, Phys. Rev. B 74, 125403 (2006). 10.1103/PhysRevB.74.125403
25. J. Yang, S. Waltermire, Y. Chen, A. A. Zinn, T. T. Xu, and D. Li, Appl. Phys. Lett. 96, 023109 (2010). 10.1063/1.3292203
26. M. S. Fuhrer, J. Nygård, L. Shih, M. Forero, Y.-G. Yoon, M. S. C. Mazzoni, H. J. Choi, J. Ihm, S. G. Louie, A. Zettl, and P. L. McEuen, Science 288, 494 (2000). 10.1126/science.288.5465.494
27. D. Estrada and E. Pop, Appl. Phys. Lett. 98, 073102 (2011). 10.1063/1.3549297
28. S. Shekhar, M. Erementchouk, M. N. Leuenberger, and S. I. Khondaker, Appl. Phys. Lett. 98, 243121 (2011). 10.1063/1.3600664
29. M. C. Strus, A. N. Chiaramonti, Y. L. Kim, Y. J. Jung, and R. R. Keller, Nanotechnology 22, 265713 (2011). 10.1088/0957-4484/22/26/265713
30. A. Liao, R. Alizadegan, Z.-Y. Ong, S. Dutta, F. Xiong, K. J. Hsia, and E. Pop, Phys. Rev. B 82, 205406 (2010). 10.1103/PhysRevB.82.205406
31. E. Pop, Nanotechnology 19, 295202 (2008). 10.1088/0957-4484/19/29/295202
32. E. Pop, D. A. Mann, K. E. Goodson, and H. Dai, J. Appl. Phys. 101, 093710 (2007). 10.1063/1.2717855
33. A. Javey, J. Guo, M. Paulsson, Q. Wang, D. Mann, M. Lundstrom, and H. Dai, Phys. Rev. Lett. 92, 106804 (2004). 10.1103/PhysRevLett.92.106804
34. H. Maune, H.-Y. Chiu, and M. Bockrath, Appl. Phys. Lett. 89, 013109 (2006). 10.1063/1.2219095
35. R. V. Seidel, A. P. Graham, B. Rajasekharan, E. Unger, M. Liebau, G. S. Duesberg, F. Kreupl, and W. Hoenlein, J. Appl. Phys. 96, 6694 (2004). 10.1063/1.1807523
36. S. Kumar, M. A. Alam, and J. Y. Murthy, J. Heat Transfer 129, 500 (2007). 10.1115/1.2709969
37. S. Kumar, N. Pimparkar, J. Y. Murthy, and M. A. Alam, J. Appl. Phys. 109, 014315 (2011). 10.1063/1.3524209
38. N. Pimparkar, Q. Cao, S. Kumar, J. Y. Murthy, J. Rogers, and M. A. Alam, IEEE Electron Device Lett. 28, 157 (2007). 10.1109/LED.2006.889219
39. C. Kocabas, N. Pimparkar, O. Yesilyurt, S. J. Kang, M. A. Alam, and J. A. Rogers, Nano Letters 7, 1195 (2007). 10.1021/nl062907m
40. M. Timmermans, D. Estrada, A. Nasibulin, J. Wood, A. Behnam, D.-M. Sun, Y. Ohno, J. Lyding, A. Hassanien, E. Pop, and E. Kauppinen, Nano Res. 5, 307 (2012). 10.1007/s12274-012-0211-8
41. R. Alizadegan, A. Liao, F. Xiong, E. Pop, and K. Hsia, Nano Res. 5, 235 (2012). 10.1007/s12274-012-0203-8
42. S. J. Stuart, A. B. Tutein, and J. A. Harrison, J. Chem. Phys. 112, 6472 (2000). 10.1063/1.481208
43. S. Munetoh, T. Motooka, K. Moriguchi, and A. Shintani, Comput. Mater. Sci. 39, 334 (2007). 10.1016/j.commatsci.2006.06.010
44. A. K. Rappe, C. J. Casewit, K. S. Colwell, W. A. Goddard, and W. M. Skiff, J. Am. Chem. Soc 114, 10024 (1992). 10.1021/ja00051a040
45. Z.-Y. Ong and E. Pop, Phys. Rev. B 81, 155408 (2010). 10.1103/PhysRevB.81.155408
46. K. Hata, D. N. Futaba, K. Mizuno, T. Namai, M. Yumura, and S. Iijima, Science 306, 1362 (2004). 10.1126/science.1104962
47. C.-W. Nan, G. Liu, Y. Lin, and M. Li, Appl. Phys. Lett. 85, 3549 (2004). 10.1063/1.1808874
48. C. W. Nan, Z. Shi, and Y. Lin, Chem. Phys. Lett. 375, 666 (2003). 10.1016/S0009-2614(03)00956-4
49. C.-W. Nan, R. Birringer, D. R. Clarke, and H. Gleiter, J. Appl. Phys. 81, 6692 (1997). 10.1063/1.365209
50. V. K. Sangwan, A. Behnam, V. W. Ballarotto, M. S. Fuhrer, A. Ural, and E. D. Williams, Appl. Phys. Lett. 97, 043111 (2010). 10.1063/1.3469930
51. N. Rouhi, D. Jain, K. Zand, and P. J. Burke, Adv. Mater. 23, 94 (2010). 10.1002/adma.201003281