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Volumn 103, Issue 11, 2013, Pages

Low temperature grown GaNAsSb: A promising material for photoconductive switch application

(10) Tan, K H a Yoon, S F a Wicaksono, S a Loke, W K a Li, D S a Saadsaoud, N b Tripon Canseliet, C b Lampin, J F c Decoster, D c Chazelas, J d

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b SORBONNE UNIVERSITÉ (France)

c INSTITUT D ELECTRONIQUE (France)

d THALES (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATERIAL; LOW TEMPERATURE GROWTH; LOW-TEMPERATURE GROWN; NITROGEN SOURCES; PHOTOABSORPTIONS; RADIO FREQUENCIES;

MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVE SWITCHES;

TEMPERATURE;

EID: 84884247378 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4820797 Document Type: Article

Times cited : (14)

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