Concomitant incorporation of antimony and nitrogen in GaAsSbN lattice-matched to GaAs

Journal of Crystal Growth

Volumn 274, Issue 3-4, 2005, Pages 355-361

  Wicaksono, S ^a   Yoon, S F ^a   Tan, K H ^a   Cheah, W K ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

A1. Lattice matched; A1. Long wavelength; A3. Molecular beam epitaxy; B1. GaAsSbN; B3. GaAs based optoelectronic devices

Indexed keywords

APPROXIMATION THEORY; DOPING (ADDITIVES); GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; NITROGEN; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

GAAS-BASED OPTOELECTRONIC DEVICES; GAASSBN; LATTICE MATCHING; LONG WAVELENGTH;

ANTIMONY;

EID: 12244294513     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.050     Document Type: Article

References (21)

1. G. Ungaro, G. Le Roux, R. Teissier, and J.C. Harmand Electron. Lett. 35 1999 1246
2. S. Wei, and A. Zunger Phys. Rev. Lett. 76 1996 664
3. J.C. Harmand, G. Ungaro, J. Ramos, E.V.K. Rao, G. Saint-Girons, R. Teissier, G. Le Roux, L. Largeau, and G. Patriarche J. Crystal Growth 227-228 2001 553
4. J.-M. Chauveau, A. Trampert, M.-A. Pinault, E. Tournie, K. Duc, and K.H. Ploog J. Crystal Growth 251 2003 383
5. G. Ungaro, L. Sagnes, G. Le Roux, L. Largeau, G. Patriarche, J. Saint-Girons, J.C. Harmand, Proceedings of the International Conference on Indium Phosphide and Related Materials, 2000, p. 553.
6. J.-C. Harmand, A. Caliman, E.V.K. Rao, L. Largeaux, J. Ramos, R. Teissier, L. Travers, G. Ungaro, B. Theys, and I.F.L. Dias Semicond. Sci. Technol. 17 2002 778
7. K. Volz, V. Gambin, W. Ha, M.A. Wistey, H. Yuen, S. Bank, and J.S. Harris J. Crystal Growth 251 2003 360
8. F. Geisz, D.J. Friedman, J.M. Olson, S.R. Kurtz, and B.M. Keyes J. Crystal Growth 195 1998 401
9. W.W. Chow, E.D. Jones, N.A. Modine, A.A. Allerman, and S.R. Kurtz Appl. Phys. Lett. 75 1999 2891
10. R. Teissier, D. Sicault, J.C. Harmand, G. Ungaro, G. Le Roux, and L. Largeau J. Appl. Phys. 89 2001 5473
11. P.D. Brewer, D.H. Chow, and R.H. Miles J. Vac. Sci. Technol. B 14 1996 2335
12. M.-A. Pinault, and E. Tournié Appl. Phys. Lett. 79 2001 3404
13. Z.Z. Sun, S.F. Yoon, K.C. Yew, W.K. Loke, W. Fan, S. Wang, and T.K. Ng J. Appl. Phys. 94 2003 1069
14. J.C. Harmand, G. Ungaro, L. Largeau, and G. Le Roux Appl. Phys. Lett. 77 2000 2482
15. F. Dimroth, A. Howard, J.K. Shurtleff, and G.B. Stringfellow J. Appl. Phys. 91 2002 3687
16. W.K. Cheah, W.J. Fan, S. Wicaksono, S.F. Yoon, and K.H. Tan J. Crystal Growth 254 2003 305
17. I.A. Buyanova, W.M. Chen, B. Monemar, H.P. Xin, and C.W. Tu Appl. Phys. Lett. 75 1999 3781
18. L.H. Li, V. Sallet, G. Patriarche, L. Largeau, S. Bouchoule, L. Travers, and J.C. Harmand Appl. Phys. Lett. 83 2003 1298
19. S.G. Spruytte, M.C. Larson, W. Wampler, C.W. Coldren, H.E. Petersen, and J.S. Harris J. Crystal Growth 227-228 2001 506
20. Z. Pan, L.H. Li, W. Zhang, Y.W. Lin, and R.H. Wu Appl. Phys. Lett. 77 2000 214
21. M. Yano, M. Ashida, A. Kawaguchi, Y. Iwai, and M. Inoue J. Vac. Sci. Technol. B 7 1989 199