Solid solutions and ternary compound formation among Ge3N 4-Si3N4 nitride spinels synthesized at high pressure and high temperature

Chemistry of Materials

Volumn 16, Issue 25, 2004, Pages 5344-5349

  Soignard, Emmanuel ^a,b,c   McMillan, Paul P ^a,b   Leinenweber, Kurt ^c  

^a DAVY FARADAY RESEARCH LABORATORY   (United Kingdom)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL STRUCTURE; ENERGY GAP; SEMICONDUCTOR MATERIALS; SOLID SOLUTIONS; SYNTHESIS (CHEMICAL);

SPINEL STRUCTURE; WIDE BAND GAP SEMICONDUCTORS;

TERNARY SYSTEMS;

GERMANIUM; SILICON;

ARTICLE; CHEMICAL COMPOSITION; CHEMICAL STRUCTURE; COMBINATORIAL CHEMISTRY; HIGH TEMPERATURE; MOLECULAR INTERACTION; PHASE TRANSITION; PREDICTION; SEMICONDUCTOR; SOLID STATE; STRUCTURE ANALYSIS;

EID: 10444285102     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm048930v     Document Type: Article

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