Overcoming challenges to the formation of high-quality polycrystalline TiO2:Ta transparent conducting films by magnetron sputtering

Journal of Applied Physics

Volumn 114, Issue 8, 2013, Pages

  Neubert, M ^a   Cornelius, S ^a   Fiedler, J ^a   Gebel, T ^b   Liepack, H ^b   Kolitsch, A ^a   Vinnichenko, M ^c  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b DTF Technology GmbH   (Germany)

^c FRAUNHOFER INSTITUTE FOR CERAMIC TECHNOLOGIES AND SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT CURRENT MAGNETRON SPUTTERING; ELECTRICAL ACTIVATION; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICALLY CONDUCTIVE; OPTICAL PHONON SCATTERING; POLYCRYSTALLINE FILM; TEMPERATURE DEPENDENT; TRANSPARENT CONDUCTING FILMS;

AMORPHOUS FILMS; AMORPHOUS MATERIALS; ANNEALING; DEPOSITION; ELECTRIC PROPERTIES; MAGNETRON SPUTTERING; OXYGEN; TITANIUM DIOXIDE;

CONDUCTIVE FILMS;

EID: 84883882917     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4819088     Document Type: Article

References (30)

1. Handbook of Transparent Conductors, edited by, D. S. Ginley, (Springer-Verlag, New York, 2010).
2. Y. Furubayashi, T. Hitosugi, Y. Yamamoto, Y. Hirose, G. Kinoda, K. Inaba, K. Inaba, T. Shimada, and T. Hasegawa, Thin Solid Films 496, 157 (2006). 10.1016/j.tsf.2005.08.245
3. M. Gillispie, M. van Hest, M. Dabney, J. Perkins, and D. Ginley, J. Appl. Phys. 101, 033125 (2007). 10.1063/1.2434005
4. N. Yamada, T Hitosugi, N. Hoang, Y. Furubayashi, Y Hirose, T Shimada, and T Hasegawa, Jpn. J. Appl. Phys., Part 1 46, 5275 (2007). 10.1143/JJAP.46.5275
5. N. Yamada, T. Hitosugi, J. Kasai, N. Hoang, S. Nakao, Y. Hirose, T. Shimada, and T. Hasegawa, J. Appl. Phys. 105, 123702 (2009). 10.1063/1.3148267
6. T. Hitosugi, N. Yamada, S. Nakao, Y. Hirose, and T. Hasegawa, Phys. Status Solidi A 207, 1529 (2010). 10.1002/pssa.200983774
7. M. Junghähnel, Ph.D. thesis, Universitätsverlag Ilmenau, 2012.
8. H. A. Huy, B. Aradi, T. Frauenheim, and P. Deak, J. Appl. Phys. 112, 016103 (2012). 10.1063/1.4733350
9. J. Osorio-Guillen, S. Lany, and A. Zunger, Phys. Rev. Lett. 100, 036601 (2008). 10.1103/PhysRevLett.100.036601
10. A. Rogozin, M. Vinnichenko, A. Kolitsch, and W. Möller, J. Vac. Sci. Technol. A 22, 349 (2004). 10.1116/1.1647595
11. C. May, R. Menner, J. Strumpfel, M. Oertel, and B. Sprecher, Surf. Coat. Technol. 169, 512 (2003). 10.1016/S0257-8972(03)00161-0
12. A. Brudnik, H. Czternastek, K. Zakrzewska, and M. Jachimowski, Thin Solid Films 199, 45 (1991). 10.1016/0040-6090(91)90051-X
13. B. Johs, C. Herzingera, J. H. Dinan, A. Cornfeld, J. D. Benson, D. Doctor, G. Olson, I. Ferguson, M. Pelczynski, P. Chow, C. H. Kuo, and S. Johnson, Thin Solid Films 313, 490 (1998). 10.1016/S0040-6090(97)00870-5
14. M. Vinnichenko, N. Shevchenko, A. Rogozin, R. Grötzschel, A. Mücklich, A. Kolitsch, and W. Möller, J. Appl. Phys. 102, 113505 (2007). 10.1063/1.2821390
15. The Electrical Characterization of Semiconductors: Majority Carriers and Electron States, edited by, P. Blood, and, J. W. Orton, (Academic, London, 1992).
16. V. Kirchhoff and U. Heisig, Surf. Coat. Technol. 59, 101 (1993). 10.1016/0257-8972(93)90062-S
17. H. Poelman, H. Tomaszewski, D. Poelman, D. Depla, and R. D. Gryse, Surf. Interface Anal. 36, 1167 (2004). 10.1002/sia.1867
18. J. M. Ngaruiya, O. Kappertz, S. H. Mohamed, and M. Wuttig, Appl. Phys. Lett. 85, 748 (2004). 10.1063/1.1777412
19. S. Mráz and J. M. Schneider, J. Appl. Phys. 109, 023512 (2011). 10.1063/1.3536635
20. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (John Wiley Sons, New York, 2007).
21. D. Mergel and Z. Qiao, J. Phys. D 35, 794 (2002). 10.1088/0022-3727/35/8/ 311
22. A. Miyamura, K. Kaneda, Y. Sato, and Y. Shigesato, Thin Solid Films 516, 4603 (2008). 10.1016/j.tsf.2007.05.079
23. K. Ellmer and T. Welzel, J. Mater. Res. 27, 765 (2012). 10.1557/jmr.2011.428
24. M. Ocana, J. V. Garcia-Ramos, and C. J. Serna, J. Am. Ceram. Soc. 75, 2010 (1992). 10.1111/j.1151-2916.1992.tb07237.x
25. T. Nakamura, T. Ichitsubo, E Matsubara, A. Muramatsu, N. Sato, and H. Takahashi, Acta Mater. 53, 323 (2005). 10.1016/j.actamat.2004.09.026
26. R. Gago, A. Redondo-Cubero, M. Vinnichenko, and L. Vazquez, Chem. Phys. Lett. 511, 367 (2011). 10.1016/j.cplett.2011.06.061
27. J. Y. Seto, J. Appl. Phys. 46, 5247 (1975). 10.1063/1.321593
28. W. Q. Han and Y. Zhang, Appl. Phys. Lett. 92, 203117 (2008). 10.1063/1.2937152
29. T. Klein, P. Achatz, J. Kacmarcik, C. Marcenat, F. Gustafsson, J. Marcus, E. Bustarret, J. Pernot, F. Omnes, B. E. Sernelius, C. Persson, A. Ferreira da Silva, and C. Cytermann, Phys. Rev. B 75, 165313 (2007). 10.1103/PhysRevB.75. 165313
30. Y. Furubayashi, N. Yamada, Y. Hirose, Y. Yamamoto, M. Otani, T. Hitosugi, T. Shimada, and T. Hasegawa, J. Appl. Phys. 101, 093705 (2007). 10.1063/1.2721748