Effect of threshold-voltage instability on siC DMOSFET reliability

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2008, Pages 72-76

  Lelis, A J ^a   Green, R ^a   Habersat, D ^a   Goldsman, N ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; SILICON CARBIDE;

DMOSFET; GATE-BIAS STRESS; PARAMETER ANALYZER; POWER; PRIMARY EFFECTS; SLOPE ANALYSIS; STATE LEAKAGE; STATE RESISTANCE; SUBTHRESHOLD SLOPE; THRESHOLD-VOLTAGE INSTABILITIES;

THRESHOLD VOLTAGE;

EID: 64549131227     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2008.4796090     Document Type: Conference Paper

References (12)

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