A 1-Mb STT-MRAM with zero-array standby power and 1.5-ns quick wake-up by 8-b fine-grained power gating

2013 5th IEEE International Memory Workshop, IMW 2013

Volumn , Issue , 2013, Pages 80-83

  Ohsawa, Takashi ^a   Ikeda, Shoji ^a   Hanyu, Takahiro ^a   Ohno, Hideo ^a   Endoh, Tetsuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

bootstrap circuit; power gating; STT RAM

Indexed keywords

BOOTSTRAP CIRCUITS; FINE-GRAINED POWER GATING; KEY TECHNOLOGIES; POWER GATING SCHEMES; POWER GATINGS; READ PERFORMANCE; STT RAMS; ULTRA-FINE-GRAINED;

GRAIN SIZE AND SHAPE; MRAM DEVICES;

RANDOM ACCESS STORAGE;

EID: 84883683264     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2013.6582103     Document Type: Conference Paper

References (7)

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