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Volumn 14, Issue 11, 2013, Pages 2859-2865

High performance n-channel thin-film field-effect transistors based on angular-shaped naphthalene tetracarboxylic diimides

(6) Chen, Shan Ci a Ganeshan, Dhanavel a Cai, Dongdong a Zheng, Qingdong a Yin, Zhigang a Wang, Fei a

a FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER (China)

Author keywords

Field effect transistors (FETs); n Type semiconductors; Naphthalene diimides; Self assembled monolayers (SAMs)

Indexed keywords

DEPOSITION; GATE DIELECTRICS; NAPHTHALENE; ORGANIC FIELD EFFECT TRANSISTORS; SELF ASSEMBLED MONOLAYERS; SURFACE TREATMENT; THIN FILM CIRCUITS; TRANSISTORS;

FIELD EFFECT TRANSISTOR (FETS); N-TYPE SEMICONDUCTORS; NAPHTHALENE DIIMIDES; OCTADECYLTRICHLOROSILANE; SAMS; SEMICONDUCTOR DEPOSITION; SUBSTRATE TEMPERATURE; THIN FILM FIELD EFFECT TRANSISTORS;

SUBSTRATES;

EID: 84883629874 PISSN: 15661199 EISSN: None Source Type: Journal
DOI: 10.1016/j.orgel.2013.08.015 Document Type: Article

Times cited : (8)

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