Wetting layer: The key player in plasma-assisted silicon nanowire growth mediated by tin

Journal of Physical Chemistry C

Volumn 117, Issue 34, 2013, Pages 17786-17790

  Misra, Soumyadeep ^a   Yu, Linwei ^a   Chen, Wanghua ^a   Roca I Cabarrocas, Pere ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE APPLICATION; GROWTH PHASE; METAL DROPLETS; SILICON NANOWIRES; TIME EVOLUTIONS; ULTRATHIN METAL LAYERS; VAPOR-LIQUID-SOLID MECHANISM; WETTING LAYER;

DROPS; METALS; MOLECULAR BEAM EPITAXY; NANOWIRES; SILICON; SURFACE TENSION; VAPORS; WETTING;

TIN;

EID: 84883394176     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp403063d     Document Type: Article

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