A model based comparison of BiFeO3 device applicability in neuromorphic hardware

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn , Issue , 2013, Pages 2323-2326

  Cederstrom, Love ^a   Starke, Paul ^b   Mayr, Christian ^b   Shuai, Yao ^c   Schmid, Heidemarie ^d   Schuffny, Rene ^a  

^a Zentrum Mikroelektronik Dresden AG   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^d CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

device model; memristive device; memristor; neuromorphic systems; STDP; synthetic synapse

Indexed keywords

DEVICE MODELING; MEMRISTIVE DEVICE; MEMRISTOR; NEUROMORPHIC SYSTEMS; STDP; SYNTHETIC SYNAPSE;

HARDWARE; HYSTERESIS; MEMRISTORS; METAL INSULATOR BOUNDARIES;

MIM DEVICES;

EID: 84883350564     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCAS.2013.6572343     Document Type: Conference Paper

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