A high-energy electron scattering study of the electronic structure and elemental composition of O-implanted Ta films used for the fabrication of memristor devices

Journal of Applied Physics

Volumn 114, Issue 7, 2013, Pages

  Vos, M ^a   Grande, P L ^a,b   Nandi, S K ^a,c   Venkatachalam, D K ^a   Elliman, R G ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^c UNIVERSITY OF CHITTAGONG   (Bangladesh)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC COMPOSITIONS; ELECTRON ENERGIES; ELECTRONIC EXCITATION; ELEMENTAL COMPOSITIONS; HIGH-ENERGY ELECTRON; IMPLANTED IONS; INELASTIC MEAN FREE PATH; RECOIL ENERGIES;

ELECTRON SCATTERING; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; MEMRISTORS; PASSIVE FILTERS; TANTALUM OXIDES;

TANTALUM;

EID: 84883286624     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4818524     Document Type: Article

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