Red-light-emitting diodes with site-selective Eu-doped GaN active layer

Japanese Journal of Applied Physics

Volumn 52, Issue 8 PART 2, 2013, Pages

  Sekiguchi, Hiroto ^a   Takagi, Yasufumi ^b   Otani, Tatsuki ^a   Matsumura, Ryota ^a   Okada, Hiroshi ^a   Wakahara, Akihiro ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE SPECTRUM; INTEGRATED INTENSITIES; NITRIDE SEMICONDUCTORS; PHOTOLUMINESCENCE INTENSITIES; PL EFFICIENCY; ROOM TEMPERATURE; SITE SELECTIVE; TURN-ON VOLTAGES;

ELECTRIC RECTIFIERS; ELECTROLUMINESCENCE; EUROPIUM; LIGHT EMITTING DIODES;

GALLIUM NITRIDE;

EID: 84883159482     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.08JH01     Document Type: Article

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