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Journal of Applied Physics

Volumn 105, Issue 4, 2009, Pages

Effect of Si codoping on Eu3+ luminescence in GaN

(5) Wang, R a Steckl, A J a Brown, E E b Hommerich, U b Zavada, J M c

a 705 Engineering Research Center (United States)

b HAMPTON UNIVERSITY (United States)

c North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; CRYSTAL GROWTH; EUROPIUM; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SILICON;

CO-DOPED; CO-DOPING; DEFECT POPULATIONS; EXCITATION DEPENDENCES; EXCITATION EFFICIENCIES; GAN THIN FILMS; NON-RADIATIVE CHANNELS; PHOTOLUMINESCENCE EMISSIONS; PL INTENSITIES; SI-DOPING; SOLID-SOURCE MOLECULAR BEAM EPITAXIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 61449116936 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3077268 Document Type: Article

Times cited : (35)

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