Light emitting FET based-on spatially selective doping of Eu in AlGaN/GaN HEMT

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Okada, Hiroshi ^a   Takemoto, Kazumasa ^a   Oikawa, Fumitake ^a   Furukawa, Yuzo ^a   Wakahara, Akihiro ^a   Sato, Shin ichiro ^b   Ohshima, Takeshi ^b  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; DRAIN BIAS; FABRICATED DEVICE; GATE CONTROL; IV CHARACTERISTICS; LUMINESCENCE CENTERS; LUMINESCENCE INTENSITY; NEGATIVE BIAS; RARE EARTH IONS; RED EMISSIONS; SCHOTTKY GATE; SELECTIVE DOPING;

ELECTRON MOBILITY; EUROPIUM; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; LIGHT; LUMINESCENCE; MESFET DEVICES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79251606884     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880811     Document Type: Article

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