First-principles study on migration and coalescence of point defects in monolayer graphene

Journal of Physical Chemistry C

Volumn 117, Issue 33, 2013, Pages 17066-17072

  Wu, Liang ^a   Hou, Tingjun ^a   Li, Youyong ^a   Chan, K S ^b   Lee, Shuit Tong ^a  

^a SOOCHOW UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DI-VACANCY DEFECTS; ELECTRONIC DEVICE; FIRST-PRINCIPLES STUDY; NANO-ENGINEERING; POTENTIAL MATERIALS; RELATIVE STABILITIES; SINGLE VACANCY DEFECTS; STRUCTURAL REARRANGEMENT;

ADATOMS; GRAPHENE; POINT DEFECTS; VACANCIES;

DEFECTS;

EID: 84883139320     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp405130c     Document Type: Article

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