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Volumn 13, Issue 8, 2013, Pages 1837-1843

Band gap tunable and improved microstructure characteristics of Cu 2ZnSn(S1-x,Sex)4 thin films by annealing under atmosphere containing S and Se

(8) Shin, Seung Wook a Kim, In Young c Gurav, K V c Jeong, Chae Hwan d Yun, Jae Ho e Patil, P S c,f Lee, Jeong Yong a,b Kim, Jin Hyeok c

a Institute for Basic Science (South Korea)

b Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

c Chonnam National University (South Korea)

d Materials Korea Institute of Industrial Technology (South Korea)

e Korea Institute of Energy Research (KIER) (South Korea)

f SHIVAJI UNIVERSITY (India)

Author keywords

Band gap tunable characteristics; Cu2ZnSn(S,Se)4 (CZTSSe); Earth abundant materials; Low cost effective absorber materials; Thin film solar cells (TFSCs)

Indexed keywords

ABSORBER MATERIAL; ABSORPTION CO-EFFICIENT; COATED GLASS SUBSTRATES; EARTH-ABUNDANT MATERIALS; MICROSTRUCTURE CHARACTERISTICS; OPTICAL BAND GAP ENERGY; THIN FILM SOLAR CELLS (TFSCS); VAPORIZATION TEMPERATURE;

ANNEALING; ATMOSPHERIC TEMPERATURE; ENERGY GAP; FILM PREPARATION; PHOTOELECTRONS; SUBSTRATES; THIN FILMS; ULTRAVIOLET VISIBLE SPECTROSCOPY; VAPORIZATION; VAPORS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC SULFIDE;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84883126560 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2013.06.022 Document Type: Article

Times cited : (29)

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