Electrical contact properties of Cu2S nanowires grown vertically on Cu foil by gas-solid reaction

Current Applied Physics

Volumn 9, Issue 5, 2009, Pages 890-893

  Lim, Youngseok ^a   Ok, Young Woo ^a   Tark, Sung Ju ^a   Kang, Yoonmook ^b   Kim, Donghwan ^a  

^a Korea University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Cu2S; Nanowire; Schottky

Indexed keywords

BARRIER HEIGHTS; CU FOILS; CU OXIDES; CU2S; CURRENT VOLTAGES; ELECTRICAL CONTACTS; ELECTRICAL PROPERTIES; GAS-SOLID REACTIONS; S LAYERS; SCHOTTKY; SCHOTTKY BARRIERS;

ELECTRIC CONTACTS; ELECTRIC PROPERTIES; METAL CLADDING; NANOWIRES; SCHOTTKY BARRIER DIODES;

ELECTRIC WIRE;

EID: 67349159372     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2008.08.035     Document Type: Article

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