12% Efficiency CuIn(Se,S)2 photovoltaic device prepared using a hydrazine solution process

Chemistry of Materials

Volumn 22, Issue 3, 2010, Pages 1010-1014

  Liu, Wei ^a   Mitzi, David B ^a   Yuan, Min ^a   Kellock, Andrew J ^b   Jay Chey, S ^a   Gunawan, Oki ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR MASS; BAND-GAP TUNING; CIS FILM; COATED GLASS; CRYSTALLINITIES; CUIN(SE ,S); FABRICATION COST; FILM DEPOSITION; HIGH EFFICIENCY; HOMOGENEOUS PRECURSORS; INERT ATMOSPHERES; METAL CHALCOGENIDE; NEW APPROACHES; PHOTOVOLTAIC DEVICES; POST-DEPOSITION ANNEAL; POWER CONVERSION EFFICIENCIES; PRECURSOR SOLUTIONS; SOLUTION PROCESS; THERMALLY OXIDIZED SILICON; VARIOUS SUBSTRATES;

CHALCOGENIDES; CONVERSION EFFICIENCY; DISSOLUTION; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS; SOLAR ABSORBERS; SOLAR CELLS; SPIN GLASS;

HYDRAZINE;

EID: 76249111025     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm901950q     Document Type: Article

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