Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate)/MoO 3 composite layer for efficient and stable hole injection in organic semiconductors

Journal of Applied Physics

Volumn 111, Issue 4, 2012, Pages

  Zhao, Yongbiao ^a   Chen, Jiangshan ^a   Chen, Wei ^b   Ma, Dongge ^a  

^a CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY   (China)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITE LAYER; HIGHEST OCCUPIED MOLECULAR ORBITAL; HOLE INJECTION; HOLE INJECTION LAYERS; HOLE TRANSPORT LAYERS; ORGANIC DEVICES; PEDOT:PSS; POLY(3 ,4-ETHYLENEDIOXYTHIOPHENE); POLY(STYRENE SULFONATE);

CONDUCTING POLYMERS; ELECTRON INJECTION; MOLYBDENUM OXIDE; QUANTUM CHEMISTRY; ULTRATHIN FILMS;

NANOCOMPOSITE FILMS;

EID: 84863231357     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3687933     Document Type: Article

References (21)

1. S. R. Forrest, Nature 428, 911 (2004). 10.1038/nature02498
2. S. A. Choulis, V. E. Choong, A. Patwardhan, M. K. Mathai, and F. So, Adv. Func. Mater. 16, 1075 (2006). 10.1002/(ISSN)1616-3028
3. L. Hung, C. Tang, and M. Mason, Appl. Phys. Lett. 70, 152 (1997). 10.1063/1.118344
4. M. Sessolo and H. J. Bolink, Adv. Mater. 23, 1829 (2011). 10.1002/adma.v23.16
5. H. You, Y. Dai, Z. Zhang, and D. Ma, J. Appl. Phys. 101, 026105 (2007). 10.1063/1.2430511
6. J. Z. Li, M. Yahiro, K. Ishida, H. Yamada, and K. Matsushige, Synth. Met. 151, 141 (2005). 10.1016/j.synthmet.2005.03.019
7. J. Meyer, K. Zilberberg, T. Riedl, and A. Kahn, J. Appl. Phys. 110, 033710 (2011). 10.1063/1.3611392
8. V. Shrotriya, G. Li, Y. Yao, C. Chu, and Y. Yang, Appl. Phys. Lett. 88, 073508 (2006). 10.1063/1.2174093
9. Irfan, H. J. Ding, Y. L. Gao, D. Y. Kim, J. Subbiah, and F. So, Appl. Phys. Lett. 96, 073304 (2010). 10.1063/1.3309600
10. K. Kanai, K. Koizumi, S. Ouchi, Y. Tsukamoto, K. Sakanoue, Y. Ouchi, and K. Seki, Org. Electron. 11, 188 (2010). 10.1016/j.orgel.2009.10.013
11. M. Krger, S. Hamwi, J. Meyer, T. Riedl, W. Kowalsky, and A. Kahn, Appl. Phys. Lett. 95, 123301 (2009). 10.1063/1.3231928
12. Z. Chen, I. Santoso, R. Wang, L. F. Xie, H. Y. Mao, H. Huang, Y. Z. Wang, X. Y. Gao, Z. K. Chen, D. Ma, A. T. Wee, and W. Chen, Appl. Phys. Lett. 96, 213104 (2010). 10.1063/1.3441263
13. J. Meyer, M. Krger, S. Hamwi, F. Gnam, T. Riedl, W. Kowalsky, and A. Kahn, Appl. Phys. Lett. 96, 193302 (2010). 10.1063/1.3427430
14. Y. Wang, M. Yang, D. Qi, S. Chen, W. Chen, A. T. Wee, and X. Gao, J. Chem. Phys 134, 034706 (2011). 10.1063/1.3546034
15. N. Koch, A. Kahn, J. Ghijsen, J. Pireaux, J. Schwartz, R. Johnson, and A. Elschner, Appl. Phys. Lett. 82, 70 (2003). 10.1063/1.1532102
16. S. C. Tse, S. W. Tsang, and S. K. So, J. Appl. Phys. 100, 063708 (2006). 10.1063/1.2348640
17. N. Chopra, J. Lee, Y. Zheng, S. H. Eom, J. Xue, and F. So, ACS Appl. Mater. Interfaces 1, 1169 (2009). 10.1021/am900228b
18. M. Cai, T. Xiao, R. Liu, Y. Chen, R. Shinar, and J. Shinar, Appl. Phys. Lett. 99, 153303 (2011). 10.1063/1.3634210
19. J. Q. Zhong, H. Huang, H. Y. Mao, R. Wang, S. Zhong, and W. Chen, J. Chem. Phys. 134, 154706 (2011). 10.1063/1.3582789
20. H. Peisert, A. Petr, L. Dunsch, T. Chass, and M. Knupfer, Chem. Phys. Chem. 8, 386 (2007). 10.1002/(ISSN)1439-7641
21. M. de Jong, L. van Ijzendoorn, and M. de Voigt, Appl. Phys. Lett. 77, 2255 (2000). 10.1063/1.1315344