Probing embedded structural inhomogeneities in MgZnO alloys via selective resonant Raman scattering

Applied Physics Letters

Volumn 102, Issue 19, 2013, Pages

  Thapa, Dinesh ^a   Huso, Jesse ^a   Che, Hui ^a   Huso, Michelle ^a   Morrison, John L ^a   Gutierrez, Diana ^a   Grant Norton, M ^b   Bergman, Leah ^a  

^a UNIVERSITY OF IDAHO   (United States)

^b Washington State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY SYSTEM; CUBIC PHASE; PHASE SEGREGATIONS; RESONANT CONDITION; RESONANT RAMAN SCATTERING; SENSITIVE TECHNIQUES; STRUCTURAL INHOMOGENEITIES;

LASER EXCITATION; PHASE SEPARATION; ZINC SULFIDE;

RAMAN SCATTERING;

EID: 84877991111     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4805005     Document Type: Article

References (40)

1. A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, Appl. Phys. Lett. 72, 2466 (1998). 10.1063/1.121384
2. A. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng, C. Jin, A. Kvit, R. M. Kolbas, and O. W. Holland, Appl. Phys. Lett. 75, 3327 (1999). 10.1063/1.125340
3. S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, Appl. Phys. Lett. 80, 1529 (2002). 10.1063/1.1456266
4. J. L. Morrison, J. Huso, H. Hoeck, E. Casey, J. Mitchell, L. Bergman, and M. G. Norton, J. Appl. Phys. 104, 123519 (2008). 10.1063/1.3043609
5. X.-B. Chen, J. Huso, J. L. Morrison, and L. Bergman, J. Appl. Phys. 102, 116105 (2007). 10.1063/1.2822156
6. J. Huso, J. L. Morrison, J. Mitchell, E. Casey, H. Hoeck, C. Walker, L. Bergman, W. M. H. Oo, and M. D. McCluskey, Appl. Phys. Lett. 94, 061919 (2009). 10.1063/1.3081628
7. Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doǧan, V. Avrutin, S.-J. Cho, and H. Morkoç, J. Appl. Phys. 98, 041301 (2005). 10.1063/1.1992666
8. D. M. Roessler and W. C. Walker, Phys. Rev. Lett. 17, 319 (1966). 10.1103/PhysRevLett.17.319
9. J. Chen and W. Z. Shen, Appl. Phys. Lett. 83, 2154 (2003). 10.1063/1.1610795
10. C. Bundesmann, A. Rahm, M. Lorenz, M. Grundmann, and M. Schubert, J. Appl. Phys. 99, 113504 (2006). 10.1063/1.2200447
11. E. R. Segnit and A. E. Holland, J. Am. Ceram. Soc. 48, 409 (1965). 10.1111/j.1151-2916.1965.tb14778.x
12. C. W. Teng, J. F. Muth, Ü. Özgür, M. J. Bergmann, H. O. Everitt, A. K. Sharma, C. Jin, and J. Narayan, Appl. Phys. Lett. 76, 979 (2000). 10.1063/1.125912
13. J. Narayan, A. K. Sharma, A. Kvit, C. Jin, J. F. Muth, and O. W. Holland, Solid State Commun. 121, 9-13 (2001) 10.1016/S0038-1098(01)00431-8.
14. J. L. Morrison, J. Huso, H. Che, D. Thapa, M. Huso, M. G. Norton, and L. Bergman, J. Mater. Sci.: Mater. Electron. 23, 437 (2012). 10.1007/s10854-011- 0530-7
15. J. D. Ye, K. W. Teoh, X. W. Sun, G. Q. Lo, D. L. Kwong, H. Zhao, S. L. Gu, R. Zhang, Y. D. Zheng, S. A. Oh, X. H. Zhang, and S. Tripathy, Appl. Phys. Lett. 91, 091901 (2007). 10.1063/1.2775813
16. C. Bundesmann, M. Schubert, D. Spemann, T. Butz, M. Lorenz, E. M. Kaidashev, M. Grundmann, N. Ashkenov, H. Neumann, and G. Wagner, Appl. Phys. Lett. 81, 2376 (2002). 10.1063/1.1509862
17. C. Bundesmann, M. Schubert, A. Rahm, D. Spemann, H. Hochmuth, M. Lorenz, and M. Grundmann, Appl. Phys. Lett. 85, 905 (2004). 10.1063/1.1777797
18. J. F. Kong, W. Z. Shen, Y. W. Zhang, C. Yang, and X. M. Li, Appl. Phys. Lett. 92, 191910 (2008). 10.1063/1.2930676
19. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors (Springer, New York, 1996), p. 391.
20. D. Gammon, Raman scattering in semiconductor heterostructures., in Raman Scattering in Materials Science, edited by, W. H. Weber, and, R. Merlin, (Springer, New York, 2000), p. 109.
21. D. Gammon, S. W. Brown, E. S. Snow, T. A. Kennedy, D. S. Katzer, and D. Park, Science 277, 85 (1997). 10.1126/science.277.5322.85
22. S. Hernández, R. Cuscó, D. Pastor, L. Artús, K. P. ODonnell, R. W. Martin, I. M. Watson, Y. Nanishi, and E. Calleja, J. Appl. Phys. 98, 013511 (2005). 10.1063/1.1940139
23. N. Wieser, O. Ambacher, H.-P. Felsl, L. Görgens, and M. Stutzmann, Appl. Phys. Lett. 74, 3981 (1999). 10.1063/1.124243
24. V. Lemos, E. Silveira, J. R. Leite, A. Tabata, R. Trentin, L. M. R. Scolfaro, T. Frey, D. J. As, D. Schikora, and K. Lischka, Phys. Rev. Lett. 84, 3666 (2000). 10.1103/PhysRevLett.84.3666
25. A. Kar, D. Alexson, M. Dutta, and M. A. Stroscio, J. Appl. Phys. 104, 073502 (2008). 10.1063/1.2986140
26. D. Behr, J. Wagner, A. Ramakrishnan, H. Obloh, and K.-H. Bachem, Appl. Phys. Lett. 73, 241 (1998). 10.1063/1.121768
27. J. C. Manifacier, J. Gasiot, and J. P. Fillard, J. Phys. E: Sci. Instrum. 9, 1002 (1976). 10.1088/0022-3735/9/11/032
28. J. Tauc, Optical Properties of Amorphous Semiconductors., in Amorphous and Liquid Semiconductors, edited by, J. Tauc, (Plenum, London, 1974), p. 159.
29. S. T. Tan, B. J. Chen, X. W. Sun, W. J. Fan, H. S. Kwok, X. H. Zhang, and S. J. Chua, J. Appl. Phys. 98, 013505 (2005). 10.1063/1.1940137
30. H. Che, J. Huso, J. L. Morrison, D. Thapa, M. Huso, W. J. Yeh, M. C. Tarun, M. D. McCluskey, and L. Bergman, J. Nanomaterials 2012, 963485 (2012) 10.1155/2012/963485.
31. M. Wang, E. J. Kim, S. Kim, J. S. Chung, I.-K. Yoo, E. W. Shin, S. H. Hahn, and C. Park, Thin Solid Films 516, 1124 (2008). 10.1016/j.tsf.2007.05.039
32. R. Viswanatha, S. Chakraborty, S. Basu, and D. D. Sarma, J. Phys. Chem. B 110, 22310 (2006). 10.1021/jp065384f
33. T. C. Damen, S. P. S. Porto, and B. Tell, Phys. Rev. 142, 570 (1966). 10.1103/PhysRev.142.570
34. K. Ishikawa, N. Fujima, and H. Komura, J. Appl. Phys. 57, 973 (1985). 10.1063/1.334701
35. R. C. C. Leite, J. F. Scott, and T. C. Damen, Phys. Rev. Lett. 22, 780 (1969). 10.1103/PhysRevLett.22.780
36. M. V. Klein and S. P. S. Porto, Phys. Rev. Lett. 22, 782 (1969). 10.1103/PhysRevLett.22.782
37. H. Bliz and W. Kress, Phonon Dispersion Relations in Insulators (Springer, New York, 1979).
38. C. Raptis, Phys. Rev. B 33, 1350 (1986). 10.1103/PhysRevB.33.1350
39. R. T. Harley, J. B. Page, Jr., and C. T. Walker, Phys. Rev. Lett. 23, 922 (1969). 10.1103/PhysRevLett.23.922
40. G. D. Smith, S. Firth, R. J. H. Clark, and M. Cardona, J. Appl. Phys. 92, 4375 (2002). 10.1063/1.1505670