Advanced TSV-based crystal resonator devices using 3-d integration scheme with hermetic sealing

IEEE Electron Device Letters

Volumn 34, Issue 8, 2013, Pages 1041-1043

  Shih, Jian Yu ^a   Chen, Yen Chi ^b   Chiu, Chih Hung ^b   Hu, Yu Chen ^a   Lo, Chung Lun ^b   Chang, Chi Chung ^b   Chen, Kuan Neng ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TXC CORPORATION   (Taiwan)

Author keywords

3 D integration; crystal resonator through silicon via (TSV)

Indexed keywords

3-D INTEGRATION; ELECTRICAL CHARACTERISTIC; HARSH ENVIRONMENT; LOW-LEAKAGE CURRENT; MANUFACTURABILITY; PACKAGING TECHNOLOGIES; STRUCTURAL QUALITIES; THROUGH-SILICON VIA;

INTEGRATION; SILICON;

CRYSTAL RESONATORS;

EID: 84881027689     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2265335     Document Type: Article

References (8)

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