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IMPACT Conference 2009 International 3D IC Conference - Proceedings

Volumn , Issue , 2009, Pages 186-189

A novel Cu plating formula for filling through silicon vias

(7) Shen, Shao Ping a Dow, Wei Ping a Kubo, Motonobu b Kamitamari, Tohru b Cheng, Eric b Lin, Jing Yuan c Hsu, Fu Chiang c

a NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

b Central Research and Development Laboratory (Taiwan)

c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AREA PENALTY; CONVECTION-DEPENDENT ADSORPTION; COPPER DEPOSITION; COPPER ELECTROPLATING; ELECTROCHEMICAL ANALYSIS; FILLING BEHAVIOR; FILLING MODES; FLUID MOTIONS; INTERCONNECT DELAY; INTERCONNECT DENSITIES; KEYPOINTS; OPTICAL MICROSCOPES; PHYSICAL INTERACTIONS; PLATING ADDITIVES; POTENTIOSTATS; ROTATION SPEED; SEAM FORMATION; SIGNAL PATHS; SYSTEM'S PERFORMANCE; THREE ELECTRODE CELLS; THREE-DIMENSIONAL (3D) PACKAGING; THROUGH SILICON VIAS; THROUGH-SILICON-VIA; TOP SURFACE; U-SHAPED; VIA FILLING; VOID-FREE; WORKING ELECTRODE;

ADSORPTION; ASPECT RATIO; COPPER; COPPER DEPOSITS; COPPER PLATING; DEPOSITS; ELECTRONICS PACKAGING; ELECTROPLATING; FILLING; FLUIDS; INTERCONNECTION NETWORKS; SILICON WAFERS; SURFACES; THREE DIMENSIONAL; VOLTAGE REGULATORS;

FILLED POLYMERS;

EID: 77950848949 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/IMPACT.2009.5382146 Document Type: Conference Paper

Times cited : (19)

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