-
2
-
-
84955615858
-
Erratic erase in etox™ flash memory array
-
T. Ong, A. Fazio, N. Mielke, S. Pan, N. Righos, G. Atwood, and S. Lai, "Erratic erase in etox™ flash memory array," in VLSI Symp. on Tech., 1993, pp. 83-84.
-
(1993)
VLSI Symp. on Tech.
, pp. 83-84
-
-
Ong, T.1
Fazio, A.2
Mielke, N.3
Pan, S.4
Righos, N.5
Atwood, G.6
Lai, S.7
-
3
-
-
0038545250
-
Analysis of erratic bits in flash memories
-
A. Chimenton, P. Pellati, and P. Olivo, "Analysis of erratic bits in flash memories," IEEE Transactions on Device and Materials Reliability, Vol. 1, no. 4, pp. 179-184, 2001.
-
(2001)
IEEE Transactions on Device and Materials Reliability
, vol.1
, Issue.4
, pp. 179-184
-
-
Chimenton, A.1
Pellati, P.2
Olivo, P.3
-
4
-
-
84881007008
-
Fast erratic bits in fn/fn flash memories and a new method for eb characterization
-
G. Tempel, "Fast erratic bits in fn/fn flash memories and a new method for eb characterization," in Proc. NVSMW, 2003, pp. 78-80.
-
(2003)
Proc. NVSMW
, pp. 78-80
-
-
Tempel, G.1
-
5
-
-
36449003773
-
Model for the substrate hole current based on thermoionic hole emission from the anode during fowler-nordheim electron tunneling in n-channel metaloxide-semiconductor field-effect transistors
-
K. Kobayashi, A. Teramoto, M. Hirayama, and Y. Fujita, "Model for the substrate hole current based on thermoionic hole emission from the anode during fowler-nordheim electron tunneling in n-channel metaloxide-semiconductor field-effect transistors," J. Appl. Phys., Vol. 77, pp. 3277-3282, 1994.
-
(1994)
J. Appl. Phys.
, vol.77
, pp. 3277-3282
-
-
Kobayashi, K.1
Teramoto, A.2
Hirayama, M.3
Fujita, Y.4
-
6
-
-
33947647140
-
Mosfet gate oxide reliability: Anode hole injection model and its applications
-
Y. Yeo, Q. Lu, and C. Hu, "Mosfet gate oxide reliability: Anode hole injection model and its applications," International Journal of High Speed Electronics and Systems, Vol. 11, no. 3, pp. 849-886, 2001.
-
(2001)
International Journal of High Speed Electronics and Systems
, vol.11
, Issue.3
, pp. 849-886
-
-
Yeo, Y.1
Lu, Q.2
Hu, C.3
-
7
-
-
77953028194
-
A new methodology for two-level random-telegraph-noise identification and statistical analysis
-
A. Chimenton, C. Zambelli, and P. Olivo, "A new methodology for two-level random-telegraph-noise identification and statistical analysis," IEEE Electron Device Letters, Vol. 31, no. 6, pp. 612-614, 2010.
-
(2010)
IEEE Electron Device Letters
, vol.31
, Issue.6
, pp. 612-614
-
-
Chimenton, A.1
Zambelli, C.2
Olivo, P.3
-
8
-
-
34250790753
-
Recovery effects in the distributed cycling of flash memories
-
N. Mielke, H. Belgal, A. Fazio, Q. Meng, and N. Righos, "Recovery effects in the distributed cycling of flash memories," in Proc. IEEE International Reliability Physics Symposium, 2006, pp. 29-35.
-
(2006)
Proc. IEEE International Reliability Physics Symposium
, pp. 29-35
-
-
Mielke, N.1
Belgal, H.2
Fazio, A.3
Meng, Q.4
Righos, N.5
-
10
-
-
84881004528
-
Redundancy
-
R. Micheloni and L. Crippa and A. Marelli, Ed. Springer-Verlag
-
A. Marelli and R. Micheloni, "Redundancy," in Inside NAND Flash memories, R. Micheloni and L. Crippa and A. Marelli, Ed. Springer-Verlag, 2010, pp. 353-392.
-
(2010)
Inside NAND Flash Memories
, pp. 353-392
-
-
Marelli, A.1
Micheloni, R.2
-
11
-
-
51549114280
-
Bit error rate in nand flash memories
-
N. Mielke, T. Marquart, W. Ning, J. Kessenich, H. Belgal, E. Schares, F. Trivedi, E. Goodness, and L. Nevill, "Bit error rate in nand flash memories," in Proc. IEEE International Reliability Physics Symposium, 2008, pp. 9-19.
-
(2008)
Proc. IEEE International Reliability Physics Symposium
, pp. 9-19
-
-
Mielke, N.1
Marquart, T.2
Ning, W.3
Kessenich, J.4
Belgal, H.5
Schares, E.6
Trivedi, F.7
Goodness, E.8
Nevill, L.9
|