Joint mapping of mobility and trap density in colloidal quantum dot solids

ACS Nano

Volumn 7, Issue 7, 2013, Pages 5757-5762

  Stadler, Philipp ^a   Sutherland, Brandon R ^a   Ren, Yuan ^a   Ning, Zhijun ^a   Simchi, Arash ^a,b   Thon, Susanna M ^a   Hoogland, Sjoerd ^a   Sargent, Edward H ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b SHARIF UNIVERSITY OF TECHNOLOGY   (Iran)

Author keywords

colloidal quantum dots; field effect transistor; mobility; subthreshold swing; trap states

Indexed keywords

COLLOIDAL QUANTUM DOTS; DENSITY OF TRAP STATE; ELECTRONIC TRANSPORT; NANOCRYSTAL FILMS; QUANTUM DOT SOLIDS; SUBTHRESHOLD SWING; TRAP STATE; VOLTAGE BREAKDOWN;

CARRIER MOBILITY; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DOPING;

SEMICONDUCTOR QUANTUM DOTS;

COLLOID; NANOMATERIAL; QUANTUM DOT;

CHEMISTRY; COLLOID; DEVICE FAILURE ANALYSIS; DEVICES; ELECTRON TRANSPORT; EQUIPMENT DESIGN; MATERIALS TESTING; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE; ARTICLE; EQUIPMENT; EQUIPMENT FAILURE;

COLLOIDS; ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; NANOSTRUCTURES; PARTICLE SIZE; QUANTUM DOTS; TRANSISTORS, ELECTRONIC;

EID: 84880808576     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn401396y     Document Type: Article

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