1400 volt, 5 mΩ-cm2 SiC MOSFETs for high-speed switching

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2010, Pages 365-368

  Matocha, Kevin ^a   Losee, Pete ^a   Arthur, Steve ^a   Nasadoski, Jeff ^a   Glaser, John ^a   Dunne, Greg ^a   Stevanovic, Ljubisa ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUCK CONVERTERS; DEVICE PERFORMANCE; GATE OXIDE RELIABILITY; HIGH-SPEED SWITCHING; MOSFETS; ON-RESISTANCE; POWER MOSFETS; SPECIFIC-ON-RESISTANCE; SWITCHING APPLICATIONS; SWITCHING ENERGY; SWITCHING LOSS;

MOS DEVICES; MOSFET DEVICES; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; SWITCHING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956605593     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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4. B. Hull C. Jonas, S.-H. Ryu, M. Das, M. O'Loughlin, F. Husna, R. Callanan, J. Richmond, A. Agarwal, J. Palmour and C. Scozzie, Mat. Sci. Forum, v. 615-617, pp. 749-752, 2009.
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6. K. Matocha, G. Dunne, S. Soloviev and R. Beaupre, "Time-dependent dielectric breakdown of 4H-SiC MOS capacitors and DMOSFETs, " IEEE Trans. Elect. Dev., v. 55, pp. 1830-1834, 2008.