Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET's

Microelectronics Reliability

Volumn 43, Issue 9-11, 2003, Pages 1877-1882

  Castellazzi, A ^a,b   Kartal, V ^c   Kraus, R ^d   Seliger, N ^a   Honsberg Riedl, M ^a   Schmitt Landsiedel, D ^b  

^a SIEMENS AG   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; COMPUTER SIMULATION; ELECTRIC LOSSES;

ELECTRO-THERMAL EFFECTS;

MOSFET DEVICES;

EID: 0042193162     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00319-6     Document Type: Conference Paper

References (7)

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3. Q. Liu, M.L. Locatelli, J.P. Chante, Study of High-Temperature PowerMOSFET Electrical Behaviour for Automotive Applications, IPEMC'94, Beijing.
4. th, 2002.
5. th October 02, Bellaria, Italy.
6. J. W. Slotboom, The pn-Product in Silicon, Solid State Electronics 1977, Vol. 20, pp. 279-283.
7. S. M. Sze, Physics of Semiconductor Devices, J. Wiley& Sons, 1981.