Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

Journal of Applied Crystallography

Volumn 46, Issue 4, 2013, Pages 893-897

  Davydok, Anton ^a   Rieger, Torsten ^b,c   Biermanns, Andreas ^a   Saqib, Muhammad ^a   Grap, Thomas ^b,c   Lepsa, Mihail Ion ^b,c   Pietsch, Ullrich ^a  

^a UNIVERSITY OF SIEGEN   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c Jülich Aachen Research Alliance Fundamentals of Future Information Technology JARA FIT   (Germany)

Author keywords

molecular beam epitaxy (MBE) growth; semiconductor nanowires; X ray diffraction

Indexed keywords

ALLOY FORMATION; DEFECTIVE OXIDES; GROWTH PROCESS; INAS NANOWIRES; NANOSTRUCTURE FORMATION; OUT-OF-PLANE; SEMICONDUCTOR NANOWIRE; VERTICALLY ALIGNED;

ALLOYS; CRYSTALLITES; EPITAXIAL GROWTH; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; NANOWIRES; SEMICONDUCTING GALLIUM; SILICON; X RAY DIFFRACTION;

SEMICONDUCTOR GROWTH;

EID: 84880557115     PISSN: 00218898     EISSN: 16005767     Source Type: Journal    
DOI: 10.1107/S0021889813010522     Document Type: Article

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