Fabrication of Ni-NiO-Cu metal-insulator-metal tunnel diodes via anodic aluminum oxide templates

ECS Solid State Letters

Volumn 2, Issue 1, 2013, Pages

  Zhang, Shijun ^a   Wang, Lei ^a   Xu, Chen ^a   Li, Dan ^a   Chen, Leifeng ^a   Yang, Deren ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC ALUMINUM OXIDE TEMPLATE; CONTACT AREAS; ELECTROCHEMICAL DEPOSITION; INSULATOR LAYER; METAL INSULATOR METALS; MIM DIODES; NANO CHANNELS; THERMAL OXIDATION;

ANODIC OXIDATION; METAL INSULATOR BOUNDARIES; NICKEL; OXIDES; REDUCTION; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL DIODES;

MIM DEVICES;

EID: 84880537660     PISSN: 21628742     EISSN: 21628750     Source Type: Journal    
DOI: 10.1149/2.001301ssl     Document Type: Article

References (21)

1. N. Alimardani, E. W. Cowell III, J. F. Wager, J. F. Conley, D. R. Evans, M. Chin, S. J. Kilpatrick, and M. Dubey, J. Vac. Sci. Technol. A, 30, 113 (2012).
2. S. Krishnan, E. Stefanakos, and S. Bhansali, Thin Solid Film, 516, 2244 (2008).
3. R. Waser and M. Aono, Nat. Mater., 6, 833 (2007).
4. D. Y. Goswami, S. Vijayaraghavan, S. Lu, and G. Tamm, Sol. Energy, 76, 37 (2004).
5. S. Grover, O. Dmitriyeva, M. J. Estes, and G. Moddel, IEEE Trans. Nanotechno., 9, 716 (2010).
6. S. Krishnan, H. L. Rosa, E. Stefanakos, S. Bhansali, and K. Buckle, Sens. Actuators, A, 142, 40 (2008).
7. S. Grover and G. Moddel, Solid-State Electron., 67, 94 (2012).
8. S. P. Kwok, G. I. Haddad, and G. Lobovt, J. Appl. Phys., 42, 554 (1971).
9. S. Grover and G. Moddel, IEEE J. Photovoltaics, 1, 79 (2011).
10. E. N. Grossman, T. E. Harvey, and C. D. Reintsema, J. Appl. Phys., 91, 10134 (2002).
11. J. A. Bean, A. Weeks, and G. D. Boreman, IEEE J. Quantum Electron., 47, 126 (2011).
12. F. Yesilkoy, K. Choi, M. Dagenais, and M. Peckerar, Solid-State Electron., 54, 1211 (2010).
13. I. Wilke, Y. Oppliger, W. Herrmann, and F. K. Kneubühl, Appl. Phys. A, 58, 329 (1994).
14. E. W. Cowell III, N. Alimardani, C. C. Knutson, J. F. Conley, D. A. Keszler, B. J. Gibbons, and J. F. Wager, Adv. Mater., XX, 1 (2010).
15. L. He, Z. M. Liao, H. C. Wu, X. X. Tian, D. S. Xu, G. L. W. Cross, G. S. Duesberg, I. V. Shvets, and D. P. Yu, Nano Lett., 11, 4602 (2011).
16. L. Liu, S. H. Yoo, S. A. Lee, and S. Park, Nano Lett., 11, 3979 (2011).
17. L. P. H. Jeurgens, W. G. Sloof, F. D. Tichelaar, and E. J. Mittemeijerc, J. Appl. Phys., 92, 1650 (2002).
18. H. B. Michaelson, J. Appl. Phys., 48, 4730 (1977).
19. J. G. Simmons, J. Appl. Phys., 34, 2581 (1963).
20. K. Choi, F. Yesilkoy, G. Ryu, S. H. Cho, N. Goldsman, M. Dagenais, and M. Peckerar, IEEE Trans. Electron Devices, 58, 3519 (2011).
21. P. Periasamy, J. J. Berry, A. A. Dameron, J. D. Bergeson, D. S. Ginley, R. P. O'Hayre, and P. A. Parilla, Adv. Mater., 23, 3082 (2011). Province