A focused asymmetric metal-insulator-metal tunneling diode: Fabrication, DC characteristics and RF rectification analysis

IEEE Transactions on Electron Devices

Volumn 58, Issue 10, 2011, Pages 3519-3528

  Choi, Kwangsik ^a   Yesilkoy, Filiz ^a   Ryu, Geunmin ^a   Cho, Si Hyung ^a   Goldsman, Neil ^a   Dagenais, Mario ^a   Peckerar, Martin ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

Asymmetric tunneling diode; infrared energy conversion; metal insulator metal (MIM) tunneling diode; rectifier

Indexed keywords

AC SIGNALS; CURRENT VOLTAGE; DC CHARACTERISTICS; FIELD ENHANCEMENT; INFRARED ENERGY CONVERSION; METAL-INSULATOR-METAL TUNNELING; NON-LINEARITY; PERFORMANCE IMPROVEMENTS; PROCESS FLOWS; RECTIFIER; TUNNELING CURRENT; TUNNELING DIODES; TUNNELING RESISTANCE; ZERO-BIAS;

DIODES; DISTILLATION; ENERGY CONVERSION; METAL INSULATOR BOUNDARIES; METALS; SEMICONDUCTOR INSULATOR BOUNDARIES; TUNNEL DIODES;

MIM DEVICES;

EID: 80053189230     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2162414     Document Type: Article

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