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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 1, 2012, Pages

Impact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al2O3 tunnel barriers

(8) Alimardani, Nasir a Cowell III, E William a Wager, John F a Conley, John F a Evans, David R b Chin, Matthew c Kilpatrick, Stephen J c Dubey, Madan c

a Oregon State University (United States)

b SHARP LABORATORIES OF AMERICA (United States)

c U S ARMY RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; DIODES; ELECTRODES; METALS; MIM DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; SURFACE ROUGHNESS; WORK FUNCTION;

'CURRENT; ATOMIC LAYER DEPOSITED; BOTTOM ELECTRODES; ELECTRODE SURFACE ROUGHNESS; HIGH QUALITY; METAL INSULATOR METALS; METAL WORK FUNCTION; ROOT MEAN SQUARE ROUGHNESS; TUNNEL BARRIER; VOLTAGE CHARACTERISTICS;

METAL INSULATOR BOUNDARIES;

EID: 84855596325 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3658380 Document Type: Article

Times cited : (62)

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