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Volumn 1012, Issue , 2007, Pages 43-49
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Nanostructured ZnS:In2S3 buffer layers on Cu(In,Ga) (S,Se)2: Can voltage and efficiency be improved through interface inhomogeneities on a scale below the minority carrier diffusion length?
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Author keywords
[No Author keywords available]
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Indexed keywords
BUFFER LAYERS;
OPEN CIRCUIT VOLTAGE;
PHASE INTERFACES;
SOLAR CELLS;
ZINC SULFIDE;
CADMIUM SULFIDE;
OPTICAL WAVEGUIDES;
SILICON SOLAR CELLS;
BUFFERED CELLS;
CHALCOPYRITE ABSORBERS;
COMPOSITE BUFFERS;
MINORITY CARRIERS;
NANOSTRUCTURED INTERFACES;
NANOSTRUCTURED MATERIALS;
ZINC SULFIDE;
CU(IN ,GA)(S ,SE)2;
INHOMOGENEITIES;
INTERFACE RECOMBINATION;
LUMINESCENCE INTENSITY;
MINORITY CARRIER DIFFUSION LENGTH;
NANO-STRUCTURED;
PHOTOLUMINESCENCE MEASUREMENTS;
SURFACE PASSIVATION;
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EID: 38549121253
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (4)
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References (13)
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