Depth profiling of a CdS buffer layer on CuInS 2 measured with X-ray photoelectron spectroscopy during removal by HCl etching

Thin Solid Films

Volumn 520, Issue 7, 2012, Pages 2829-2832

  Johnson, B ^a,c   Klaer, J ^a   Fischer, Ch H ^a,b   Lauermann, I ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b FREIE UNIVERSITÄT BERLIN   (Germany)

^c FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

Cadmium; Cadmium sulfide; Copper; Copper indium sulfide; Diffusion; Hydrochloric acid; Interface; X ray photoelectron spectroscopy

Indexed keywords

CDS; CDS LAYER; CU ATOMS; CU DIFFUSION; DEPTH PROFILE; ETCHING TIME; HCL ETCH; LONG-TERM EFFECTS; SAMPLE SURFACE; SOLAR CELL ABSORBERS; THIN LAYERS;

BINDING ENERGY; BUFFER LAYERS; CADMIUM; CADMIUM COMPOUNDS; CADMIUM SULFIDE; COPPER; DEPTH PROFILING; DIFFUSION; ELECTRONS; ETCHING; HYDROCHLORIC ACID; INDIUM SULFIDE; INTERFACES (MATERIALS); PHOTONS; SOLAR ABSORBERS; STOICHIOMETRY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84856390780     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.144     Document Type: Article

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