Characteristics of thermal stress evolution during the cooling stage of multicrystalline silicon

Journal of Thermal Stresses

Volumn 36, Issue 9, 2013, Pages 947-961

  Fang, Haisheng ^a   Zhang, Quanjiang ^a   Pan, Yaoyu ^a   Wang, Sen ^a   Zhou, Naigen ^b   Zhou, Lang ^b   Lin, Maohua ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b NANCHANG UNIVERSITY   (China)

Author keywords

Directional solidification; Dislocation; Modeling; Multicrystalline silicon; Thermal stress

Indexed keywords

DISTORTION ENERGY THEORY; EXPERIMENTAL OBSERVATION; HIGH CONVERSION EFFICIENCY; INTEGRATED SIMULATIONS; MULTI-CRYSTALLINE SILICON; MULTICRYSTALLINE SILICON (MC-SI); PHOTOVOLTAIC PERFORMANCE; SOLAR-CELL APPLICATIONS;

COOLING; DISLOCATIONS (CRYSTALS); INGOTS; MODELS; OPTIMIZATION; POLYSILICON; SOLAR CELLS; SOLIDIFICATION; STRAIN ENERGY;

THERMAL STRESS;

EID: 84880199675     PISSN: 01495739     EISSN: 1521074X     Source Type: Journal    
DOI: 10.1080/01495739.2013.788902     Document Type: Article

References (18)

1. K. Nakajima, R. Murai, K. Morishita, K. Kutsukake, and N. Usami, Growth of Multicrystalline Si Ingots Using Noncontact Crucible Method for Reduction of Stress, J. Cryst. Growth, vol. 344, pp. 6-11, 2012.
2. F. Huang, R. R. Chen, J. J. Guo, H. S. Ding, Y. Q. Su, J. R. Yang, and H. Z. Fu, Continuous Melting and Directional Solidification of Silicon Ingot with an Electromagnetic Cold Crucible, China Foundry, vol. 9 pp. 24-27, 2012.
3. X. Gu, X. G. Yu, K. X. Guo, L. Chen, D. Wang, and D. R. Yang, Seed-Assisted Cast Quasi-Single Crystalline Silicon for Photovoltaic Application: Towards High Efficiency and Low Cost Silicon Solar Cells, Sol. Energy Mat. Sol. C., vol. 101, pp. 95-101, 2012.
4. H. S. Fang, S. Wang, L. Zhou, N. G. Zhou, and M. H. Lin, Influence of Furnace Design on the Thermal Stress During Directional Solidification of Multicrystalline Silicon, J. Cryst. Growth, vol. 346, pp. 5-11, 2012.
5. I. Takahashi, N. Usami, K. Kutsukake, G. Stokkan, K. Morishita, and K. Nakajima, Generation Mechanism of Dislocations During Directional Solidification of Multicrystalline Silicon Using Artificially Designed Seed, J. Cryst. Growth, vol. 312, pp. 897-901, 2010.
6. X. J. Chen, S. Nakano, and K. Kakimoto, 3D Numerical Analysis of the Influence of Material Property of a Crucible on Stress and Dislocation in Multicrystalline Silicon for Solar Cells, J. Cryst. Growth, vol. 318 , pp. 259-264, 2011.
7. F. Dreckschmidt and H. J. Moller, Defect Luminescence at Grain Boundaries in Multicrystalline Silicon, Physica Status Solidi C: Curr Solid State Phys, vol. 8, no. 4, pp. 1356-1360, 2011.
8. S. Wurzner, R. Helbig, C. Funke, and H. J. Moller, The Relationship between Microstructure and Dislocation Density Distribution in Multicrystalline Silicon, J. Appl. Phys., vol. 8, p. 108, 2010.
9. G. Sarau, A. Bochmann, S. Christiansen, and S. Schonfelder, Stresses and their Relation to Defects in Multicrystalline Solar Silicon, in: 35th IEEE Photovoltaic Specialists Conference, IEEE, New York, pp. 699-703, 2010.
10. M. Seibt, D. Abdelbarey, V. Kveder, C. Rudolf, P. Saring, L. Stolze, and O. Voss, Structure, Chemistry and Electrical Properties of Extended Defects in Crystalline Silicon for Photovoltaics, in: J. Rabier, E. LeBourhis (eds.), Physica Status Solidi C-Current Topics in Solid State Physics, Wiley-VCH Verlag GMBH, Weinhein, Germany, vol. 6, No. 8, pp. 1847-1855, 2009.
11. X. Ma, L. Zheng, H. Zhang, B. Zhao, C. Wang, and F. Xu, Thermal System Design and Optimization of an Industrial Silicon Directional Solidification System, J. Cryst. Growth, vol. 318, pp. 288-292, 2011.
12. S. Nakano, X. J. Chen, B. Gao, and K. Kakimoto, Numerical Analysis of Cooling Rate Dependence on Dislocation Density in Multicrystalline Silicon for Solar Cells, J. Cryst. Growth, vol. 318, pp. 280-282, 2011.
13. H. S. Fang, S. R. Qiu, L. L. Zheng, K. I. Schaffers, J. B. Tassano, J. A. Caird, and H. Zhang, Optimization of the Cooling Profile to Achieve Crack-Free Yb: S-FAP Crystals, J. Cryst. Growth, vol. 310, pp. 3825-3832, 2008.
14. J. Wei, H. Zhang, L. Zheng, C. Wang, and B. Zhao, Modeling and Improvement of Silicon Ingot Directional Solidification for Industrial Production Systems, Sol. Energy Mat. Sol. C., vol. 93, pp. 1531-1539, 2009.
15. F. Dupret, P. Nicodème, Y. Ryckmans, P. Wouters, and M. J. Crochet, Global Modelling of Heat Transfer in Crystal Growth Furnaces, Int. J. Heat Mass Trans., vol. 33, pp. 1849-1871, 1990.
16. F. Dupret, Y. Ryckmans, P. Wouters, and M. J. Crochet, Numerical Calculation of the Global Heat Transfer in a Czochralski Furnace, J. Cryst. Growth, vol. 79, pp. 84-91, 1986.
17. N. Miyazaki, Development of a Thermal Stress Analysis System for Anisotropic Single Crystal Growth, J. Cryst. Growth, vol. 236, pp. 455-465, 2002. (Pubitemid 34182128)
18. J. Fainberg and H. J. Leister, Finite Volume Multigrid Solver for Thermo-Elastic Stress Analysis in Anisotropic Materials, Comput. Meth. Appl. Mech. Eng., vol. 137, pp. 167-174, 1996. (Pubitemid 126395876)