Growth of multicrystalline Si ingots using noncontact crucible method for reduction of stress

Journal of Crystal Growth

Volumn 344, Issue 1, 2012, Pages 6-11

  Nakajima, Kazuo ^a   Murai, Ryota ^a   Morishita, Kohei ^a   Kutsukake, Kentaro ^b   Usami, Noritaka ^b  

^a KYOTO UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Crystal structure; A2. Growth from melt; A2. Top seeded solution growth; B2. Semiconducting silicon; B3. Solar cells

Indexed keywords

A2. GROWTH FROM MELT; CRUCIBLE WALL; GROWTH TIME; HIGH QUALITY; INGOT GROWTH; LOW TEMPERATURES; MELT TEMPERATURE; MULTICRYSTALLINE; MULTICRYSTALLINE SI; NON-CONTACT; SEED CRYSTAL; STRESS CONTROL; TEMPERATURE REDUCTION; TOP SEEDED SOLUTION GROWTH;

CRUCIBLES; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); POLYSILICON; SOLIDIFICATION; TEMPERATURE;

INGOTS;

EID: 84858073984     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.01.051     Document Type: Article

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