Nickel ohmic contacts to n-implanted (0001) 4H-SiC

Journal of Electronic Materials

Volumn 39, Issue 5, 2010, Pages 540-544

  Li, M ^a   Ahyi, A C ^a   Zhu, X ^a   Chen, Z ^a   Isaacs Smith, T ^a   Williams, J R ^a   Crofton, J ^b  

^a AUBURN UNIVERSITY   (United States)

^b MURRAY STATE UNIVERSITY   (United States)

Author keywords

4H SiC; Hall concentration; Hall mobility; Ohmic contact; Specific contact resistance

Indexed keywords

4H-SIC; ACTIVATION TEMPERATURES; HALL CONCENTRATION; HALL MEASUREMENTS; HIGH TEMPERATURE; NI CONTACTS; SPECIFIC CONTACT RESISTANCES; TRANSMISSION LINE MODELS;

CONCENTRATION (PROCESS); CONTACT RESISTANCE; ELECTRIC CONTACTORS; HALL MOBILITY; OHMIC CONTACTS; SILICON CARBIDE;

GALVANOMAGNETIC EFFECTS;

EID: 77954623160     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1128-1     Document Type: Conference Paper

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