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Journal of Electronic Materials

Volumn 31, Issue 5, 2002, Pages 346-350

A technique to reduce the contact resistance to 4H-silicon carbide using germanium implantation

(8) Katulka, G a Roe, K J a Kolodzey, J a Swann, C P b Desalvo, G c Clarke, R C c Eldridge, G c Messham, R c

a UNIVERSITY OF DELAWARE (United States)

b UNIVERSITY OF DELAWARE (United States)

c NORTHROP GRUMMAN CORPORATION (United States)

Author keywords

Contact resistance; Ge; Ion implantation; SiC; TLM technique

Indexed keywords

ANNEALING; GERMANIUM; ION IMPLANTATION; NICKEL; OHMIC CONTACTS;

CONTACT RESISTANCE; TRANSFER LENGTH METHOD (TLM);

SILICON CARBIDE;

EID: 0036575382 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-002-0080-0 Document Type: Article

Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.