Field effect transistors for terahertz detection and emission

Journal of Infrared, Millimeter, and Terahertz Waves

Volumn 32, Issue 5, 2011, Pages 618-628

  Knap, Wojciech ^a   Nadar, Salman ^a   Videlier, Hadley ^a   Boubanga Tombet, Stephane ^a   Coquillat, Dominique ^a   Dyakonova, Nina ^a   Teppe, Frederic ^a   Karpierz, Kristoph ^b   Łusakowski, Jerzy ^b   Sakowicz, MacIej ^b   Kasalynas, Irmantas ^c   Seliuta, Dalius ^c   Valusis, Gintaras ^c   Otsuji, Taiichi ^d   Meziani, Yahya ^e   El Fatimy, Abdel ^f   Vandenbrouk, Simon ^g   Madjour, Kamel ^g   Théron, Didier ^g   Gaquière, Christophe ^g  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b UNIVERSITY OF WARSAW   (Poland)

^c CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^d TOHOKU UNIVERSITY   (Japan)

^e UNIVERSITY OF SALAMANCA   (Spain)

^f CARDIFF UNIVERSITY   (United Kingdom)

^g INSTITUT D ELECTRONIQUE   (France)

Author keywords

Field effect transistors; Imaging; Plasma waves; TeraHertz detectors

Indexed keywords

CHANNEL DIMENSION; CRYOGENIC TEMPERATURES; GATE TRANSISTORS; NONLINEAR PROPERTIES; PHYSICAL PHENOMENA; QUANTIZING MAGNETIC FIELD; ROOM TEMPERATURE; TERAHERTZ DETECTION; TERAHERTZ DETECTORS; TERAHERTZ RANGE; THZ DETECTION; THZ EMISSION; THZ IMAGING; THZ RADIATION; TRANSISTOR CHANNELS; TWO-DIMENSIONAL PLASMA;

DETECTORS; GALLIUM NITRIDE; MAGNETIC FIELDS; MAGNETOHYDRODYNAMICS; MESFET DEVICES; NATURAL FREQUENCIES; PLASMA OSCILLATIONS; PLASMA WAVES; TRANSISTORS;

TERAHERTZ WAVES;

EID: 79958239895     PISSN: 18666892     EISSN: 18666906     Source Type: Journal    
DOI: 10.1007/s10762-010-9647-7     Document Type: Conference Paper

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