Device loading effect on nonresonant detection of terahertz radiation in dual grating gate plasmon-resonant structure using InGaP/InGaAs/GaAs material systems

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 2, 2011, Pages 346-348

  El Moutaouakil, Amine ^a   Suemitsu, Tetsuya ^a   Otsuji, Taiichi ^a   Videlier, Hadley ^b   Boubanga Tombet, Stephane Albon ^b   Coquillat, Dominique ^b   Knap, Wojciech ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

Detection; Noise equivalent power; Responsivity; Terahertz

Indexed keywords

BEAM FOCUS; DETECTION; DUAL GRATINGS; ELECTRIC FIELD VECTORS; LOADING EFFECTS; LOADING MODELS; MATERIAL SYSTEMS; NOISE-EQUIVALENT POWER; NON-RESONANT DETECTION; RESONANT STRUCTURES; RESPONSIVITY; ROOM TEMPERATURE; SOURCE-DRAIN; TERA HERTZ; TERAHERTZ RADIATION; THZ RADIATION; THZ SOURCES; THZ WAVES;

ELECTROMAGNETIC WAVE EMISSION; GUNN DIODES; GUNN EFFECT; PLASMONS; SPATIAL DISTRIBUTION;

TERAHERTZ WAVES;

EID: 79951712617     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000569     Document Type: Article

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