AlGaN/GaN current aperture vertical electron transistors with regrown channels

Journal of Applied Physics

Volumn 95, Issue 4, 2004, Pages 2073-2078

  Ben Yaacov, Ilan ^a   Seck, Yee Kwang ^a   Mishra, Umesh K ^a   DenBaars, Steven P ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDE; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSISTORS; TWO DIMENSIONAL;

CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS; ELECTRON MOBILITY TRANSISTORS; GATE BREAKDOWN; LEAKAGE FREE DEVICE; PARASITIC LEAKAGE CURRENTS; TWO DIMENSIONAL ELECTRON GAS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 1542366576     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1641520     Document Type: Article

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