The synthesis of the Fe 3 O 4 nanoparticles and the analysis of the current-voltage measurements on Au/Fe 3 O 4 /p-Si schottky contacts in a wide temperature range

Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science

Volumn 44, Issue 8, 2013, Pages 3809-3814

  Deniz, Ali Riza ^a,b   Çaldıran, Zakir ^a   Şahin, Yilmaz ^a   Şinoforoğlu, Mehmet ^a   Metin, Önder ^a   Meral, Kadem ^a   Aydoğan, Şakir ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

^b HAKKARI UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; IRON OXIDES; MAGNETITE; NANOMAGNETICS; NANOPARTICLES; SYNTHESIS (CHEMICAL); TEMPERATURE DISTRIBUTION;

BARRIER INHOMOGENEITIES; CURRENT VOLTAGE MEASUREMENT; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL CHARACTERISTIC; MAGNETIC NANO-PARTICLES; SCHOTTKY BARRIER HEIGHTS; TEMPERATURE DEPENDENT I-V CHARACTERISTICS; WIDE TEMPERATURE RANGES;

SCHOTTKY BARRIER DIODES;

EID: 84879419111     PISSN: 10735623     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11661-013-1716-9     Document Type: Article

References (32)

1. A. Guerrero-Martínez, J. Pérez-Juste, and L.M. Liz-Marzán: Adv. Mater., 2010, vol. 22, pp. 1182-95.
2. N.H. Cho, T.C. Cheong, J.H. Min, J.H. Wu, S.J. Lee, D. Kim, J.S. Yang, S. Kim, Y.K. Kim, and S.Y. Seong: Nat. Nanotechnol., 2011, vol. 6, pp. 675-82.
3. Z. Fan, M. Shelton, A.K. Singh, D. Senapati, S.A. Khan, and P.C. Ray: ACS Nano, 2012, vol. 6, pp. 1065-73.
4. W. Yan, H. Fan, and C. Yang: Mater. Lett., 2011, vol. 65, pp. 1595-97.
5. X. Jia and H. Fan: Mater. Res. Bull., 2010, vol. 45, pp. 1496-1500.
6. L. Lou, K. Yu, Z. Zhang, R. Huang, Y. Wang, and Z. Zhu: Appl. Surf. Sci., 2012, vol. 258, pp. 8521-26.
7. U. Schwertmann and R.M. Cornell: Iron Oxides in the Laboratory: Preparation and Characterization, VCH, Weinheim, Cambridge, 1991.
8. E. Oh, B.W. Lee, T.S. Kim, J.M. Lee, S.J. Oh, and J.D. Song: Curr. Appl. Phys., 2012, vol. 12, pp. 1244-47.
9. V. Janardhanam, A. Ashok Kumar, V.R. Reddy, and P.N. Reddy: J. Alloys Compds., 2009, vol. 485, p. 467.
10. I. Dokme and S. Altindal: Semicond. Sci. Technol., 2006, vol. 21, p. 1053.
11. S. Karatas, S. Altindal, and M. Cakar: Physica B, 2005, vol. 357, p. 386.
12. S. YIlmaz, I. Polat, S. AltIndal, and E.E. BacaksIz: Mater. Sci. Eng. B, 2012, vol. 177, pp. 588-93.
13. R.T. Tung: Phys. Rev. B, 1992, vol. 45, p. 13509.
14. J.H. Werner and H.H. Guttler: J. Appl. Phys., 1991, vol. 69, pp. 1522-33.
15. H. Yan, M. Zhang, and H. Yan: J. Magnet. Magn. Mater., 2009, vol. 321, pp. 2340-44.
16. X. Zhichuan, S. Chengmin, H. Yanglong, G. Hongjun, and S. Shouheng: Chem. Mater., 2009, vol. 21, pp. 1778-80.
17. Z. ÇaldIran, A.R. Deniz, Y. Sahin, Ö. Metin, K. Meral, and Ş. Aydoǧan: J. Alloys Compds., 2013, vol. 552, pp. 437-42.
18. R. Rhoderick and R.H. Williams: Metal Semiconductor Contacts, 2nd ed., Clarendon, Oxford, United Kingdom, 1988.
19. J.P. Sullivan, R.T. Tung, M.R. Pinto, and W.R. Graham: J. Appl. Phys., 1991, vol. 70, p. 7403.
20. S. Chand and J. Kumar: Appl. Phys. A, 1996, vol. 63, p. 171.
21. J.H. Werner and H.H. Güttler: J. Appl. Phys., 1993, vol. 73, p. 1315.
22. M.B. Reddy, A.A. Kumar, V. Jamardhanam, V.R. Reddy, and P.N. Reddy: Curr. Appl. Phys., 2009, vol. 9, p. 972.
23. Y.P. Song, R.L. Van Meirhaeghe, W.H. Laflere, and F. Cardon: Solid State Electron., 1986 vol. 29, p. 19633.
24. C.A. Dimitriadis, S. Logothetidis, and I. Alexandrou: Appl. Phys. Lett., 1995, vol. 66, p. 502.
25. S. Chand and J. Kumar: Semicond. Sci. Technol., 1995, vol. 10, pp. 1680-88.
26. J.H. Werner: Appl. Phys. A, 1988, vol. 47(3), pp. 291-300.
27. M.D. Dio, A. Cola, M.G. Lupo, and L. Vasanelli: Solid-State Electron., 1995, vol. 38, pp. 1923-89.
28. M.O. Aboelfotoh: Solid-State Electron., 1991, vol. 34, pp. 51-55.
29. H. Norde: J. Appl. Phys., 1979, vol. 50, p. 5052.
30. S. Karatas, S. AltIndal, A. Türüt, and A. Özmen: Appl. Surf. Sci., 2003, vol. 217, pp. 250-60.
31. S. Karatas, S. Altindal, A. Turut, and M. Cakar: Physica B, 2007, vol. 392, p. 43.
32. S. Chand: Semicond. Sci. Technol., 2002, vol. 17, p. 3.