Optical characterizations of GaAs-based spin light emitting diodes using Fe 3O 4 spin injectors

Current Applied Physics

Volumn 12, Issue 5, 2012, Pages 1244-1247

  Oh, Eunsoon ^a   Lee, B W ^a   Kim, T S ^a   Lee, Jae Min ^b   Oh, S J ^c   Song, Jin Dong ^d  

^a Chungnam National University   (South Korea)

^b Korea Institute of Science and Technology Information (KISTI)   (South Korea)

^c Seoul National University   (South Korea)

^d Korea Institute of Science and Technology   (South Korea)

Author keywords

Electroluminescence; Half metal; Photoluminescence; Spin light emitting diodes

Indexed keywords

CARRIER INJECTION; EXCESS CARRIERS; EXCITATION WAVELENGTH; FERROMAGNETIC LAYERS; HALF METALS; HALF-METALLIC; LOW TEMPERATURE GROWTH; OPTICAL CHARACTERIZATION; PHOTOLUMINESCENCE SPECTRUM; ROOM TEMPERATURE GROWTH; SPIN INJECTION; SPIN LIGHT EMITTING DIODE; SPIN-LED;

CIRCULAR POLARIZATION; ELECTROLUMINESCENCE; GALLIUM ARSENIDE; JET PUMPS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM;

LIGHT EMITTING DIODES;

EID: 84861575781     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2012.02.041     Document Type: Article

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