The influence of Büttiker probe scattering to the port behavior of nanoscale metal-oxide-semiconductor devices

International Journal of Circuit Theory and Applications

Volumn 41, Issue 6, 2013, Pages 573-582

  Xiong, Jian ^a   Wang, Gen ^a   Mathis, Wolfgang ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

B ttiker probe; nanoscale double gate MOSFET; NEGF; ports behavior; scattering

Indexed keywords

COMPUTATIONAL BURDEN; DOUBLE GATE MOSFET; METAL OXIDE SEMICONDUCTOR; NANOSCALE METAL-OXIDE-SEMICONDUCTOR DEVICES; NEGF; NON-EQUILIBRIUM GREEN'S FUNCTION FORMALISM; PORTS BEHAVIOR; SCATTERING EFFECTS;

COMPUTER SIMULATION; DIELECTRIC DEVICES; MOS DEVICES; SCATTERING; TRANSPORT PROPERTIES;

PROBES;

EID: 84879411315     PISSN: 00989886     EISSN: 1097007X     Source Type: Journal    
DOI: 10.1002/cta.1805     Document Type: Article

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