Growth and characterization of Mg-doped GaN nanowire synthesized by the thermal evaporation method

Materials Letters

Volumn 106, Issue , 2013, Pages 352-355

  Nath Das, Sachindra ^a,b   Patra, Subhasish ^a   Prakash Kar, Jyoti ^c   Lee, Min Jung ^b   Hwan Hwang, Sung ^b   Il Lee, Tae ^b   Myoung, Jae Min ^b  

^a Burdwan Raj College   (India)

^b Yonsei University   (South Korea)

^c NATIONAL INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Deposition; Nano crystalline materials; Physical; Semiconductors; Vapor

Indexed keywords

HIGH ASPECT RATIO; PHYSICAL; PREFERENTIAL GROWTH; RELATIVE INTENSITY; STRUCTURAL AND OPTICAL CHARACTERIZATIONS; STRUCTURAL DEFECT; THERMAL EVAPORATION METHOD; VAPOR-LIQUID-SOLID METHODS;

ASPECT RATIO; DEPOSITION; GALLIUM NITRIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; THERMAL EVAPORATION; VAPORS;

NANOWIRES;

EID: 84879095375     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2013.05.062     Document Type: Article

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